• Title/Summary/Keyword: Thin film gas sensor

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The Study on development of a SAW SO$_2$ gas sensor (표면탄성파를 이용한 아황산 가스센서 개발에 관한 연구)

  • Lee, Young-Jin;Kim, Hak-Bong;Roh, Yong-Rae;Cho, Hyun-Min;Baik, Sung;,
    • The Journal of the Acoustical Society of Korea
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    • v.16 no.2
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    • pp.89-94
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    • 1997
  • A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

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Fabrication of MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si Substrate for Pyroelectric IR Sensor (초전형 적외선 센서를 위한 MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si 기판 제작)

  • Kim, Sung-Woo;Sung, Se-Kyoung;Ryu, Jee-Youl;Choi, Woo-Chang;Choi, Hyek-Hwan;Lee, Myoung-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.9 no.2
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    • pp.90-95
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    • 2000
  • The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

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Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction (p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가)

  • Yang, Yijun;Maeng, Bohee;Jung, Dong Geon;Lee, Junyeop;Kim, Yeongsam;An, Hee Kyung;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

Fabrication and Gas Sensing Characteristics of $MoO_3$ Thin Film Sensor ($MoO_3$ 박막센서 제조 및 가스감지특성)

  • Hwang, Jong-Taek;Jang, Gun-Eik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.826-829
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    • 2002
  • $MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

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Conducting Metal Oxide Interdigitated Electrodes for Semiconducting Metal Oxide Gas Sensors

  • Shim, Young-Seok;Moon, Hi-Gyu;Kim, Do-Hong;Jang, Ho-Won;Yoon, Young-Soo;Yoon, Soek-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.65-65
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    • 2011
  • We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

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Optical Hydrogen Sensor Based on Gasochromic $RuO_2{\cdot}xH_2O$ Thin Film ($RuO_2{\cdot}xH_2O$ 박막의 가스채색 현상을 이용한 수소검지 광센서)

  • Cheong, Hyeon-Sik;Jo, Hyun-Chol;Kim, Kyung-Moon
    • Transactions of the Korean hydrogen and new energy society
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    • v.16 no.1
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    • pp.9-16
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    • 2005
  • We studied the electrochromic properties of hydrated amorphous ruthenium oxide ($RuO_2{\cdot}xH_2O$) thin films using in-situ Raman spectroscopy during electrochemical charging/discharging cycles. We have found that the principal effect of hydrogen insertion into $RuO_2{\cdot}xH_2O$ is reduction of $Ru^{4+}\;to\;Ru^{3+}$, and not formation of new bonds involving hydrogen. We compared the changes in the Raman spectrum of a gasochromic $Pd/RuO_2{\cdot}xH_2O$ film as it is exposed to hydrogen gas with that of electrochemical hydrogen insertion. We tested the changes in the optical transmission of the $Pd/RuO_2{\cdot}xH_2O$ film when exposed to hydrogen gas.

Ti Deposition using Atmospheric Pressure Plasma Technology (상압플라즈마 공정을 이용한 Ti 증착 연구)

  • Kim, Kyoung-Bo
    • Journal of Convergence for Information Technology
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    • v.12 no.2
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    • pp.149-156
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    • 2022
  • In this paper, it was attempted to form a titanium (Ti: Titanium) thin film using the atmospheric pressure plasma process technology for the conductor, which is the main component of the optical sensor. The atmospheric plasma equipment was remodeled. A 4-inch Ti target for sputter was etched using CF4 gas, and the by-product was coated on a glass sample. These by-products were formed up to about 2 cm, and could be divided into 15 areas according to color. Surface shape and constituent elements were analyzed using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), respectively. Electrical properties using 4-point probe equipment were also measured. If the process is performed by positioning the sample at about 4.5 mm to 5 mm from the target, a uniform Ti thin film will be deposited. However, it was found that the thin film contained a significant amount of fluorine, which greatly affects the electrical properties of the thin film. Therefore, additional experiments and studies should be performed to remove or minimize fluorine during deposition.

Synthesis of Mixed Phase Vanadium Oxides Thin Films and Their Ethanol Gas Sensing Properties (혼합 상의 바나듐 산화물 박막 제작 및 에탄올 가스 감지 특성 연구)

  • Han, Soo Deok;Kang, Chong-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.1
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    • pp.29-33
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    • 2018
  • Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

The fabrication and gas sensing characteristics of $LaFeO_3$ thin film sensor ($LaFeO_3$ 박막센서의 제작 및 가스 검지 특성)

  • Jang, Jae-Young;Shin, Jeong-Ho;Kim, Tae-Jung;Kim, Jun-Gon;Park, Ki-Chul;Kim, Jeong-Gyoo
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1756-1758
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    • 1999
  • As new gas sensing material with high cata activity for NO decomposition and for CO oxid $LaFeO_3$ thin films with different thicknesses fabricated by the R.F. magnetron sputtering m on an $Al_2O_3$ substrates with Ag electrodes. The sensing characteristics of the $LaFeO_3$ thin films studied as a function of annealing temperature film thickness. The thin film annealed at showed the highest sensitivity of 110% for CO 60% for NO.

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Photonic-Crystal-Based Thin Film Sensor for Detecting Volatile Organic Compounds (광결정 기반의 휘발성 유기 화합물 검지 박막 센서)

  • Chang, Hyung-Kwan;Park, Jungyul
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.40 no.3
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    • pp.149-155
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    • 2016
  • Early detection of toxic gases, such as volatile organic compounds (VOCs), is important for safety and environmental protection. However, the conventional detection methods require long-term measurement times and expensive equipment. In this study, we propose a thin-film-type chemical sensor for VOCs, which consists of self-assembled monosize nanoparticles for 3-D photonic crystal structures and polydimthylsiloxane (PDMS) film. It is operated without any external power source, is truly portable, and has a fast response time. The structure color of the sensor changes when it is exposed to VOCs, because VOCs induce a swelling of the PDMS. Therefore, using this principle of color change, we can create a thin-film sensor for immediate detection of various types of VOCs. The proposed device evidences that a fast response time of just seconds, along with a clear color change, are successfully observed when the sensor is exposed to gas-phase VOCs.