• 대한금속재료학회지
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• 제47권8호
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• pp.466-473
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• 2009

Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

• 한국식품과학회지
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• 제22권4호
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• pp.479-485
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• 1990

증발 농축공정중 각종 운전 조건의 제어 및 데이터 수집을 자동으로 하기 위하여 제어 및 데이터 수집 부위에 각종 조절기와 센서를 부착하여 컴퓨터 프로그램에 의하여 공정이 진행되도록 하였다. 증발 농축 장치는 원심식 박막증발기인 Centri-Therm$(CT-1B,\;{\alpha}-Laval\;Co.,\;Sweden)$이 이용되었으며 제어 변수로는 증발기의 압력, 급액 속도, 증기의 온도 및 냉각수의 유량 등을 택했다. 그리고 데이타 수집 부위로는 급액 및 농축액의 온도와 농도, 냉각수의 입구 및 출구 온도, 증기의 온도, 증발 온도, 원료 및 농축액의 중량 변화, 응축수의 양 등을 택했다. 운전 프로그램은 PASCAL language를 이용해 작성하였으며 전 공정은 균일하게 콘트롤되었다. 냉각수는 밸브 콘트롤러에 의해 시간당 125kg의 유속으로 흐르도록 하였으며 급액 속도 125/h에서 최대 증발 속도는 41.7kg/h였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.252-257
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• 2004

Nanometer-sized structures are being applied to many devices including micro/nano electronics, optoelectronics, quantum devices, MEMS/NEMS, biosensors, etc. Especially, the thin film with submicron thickness is a basic structure for fabricating these devices, but its mechanical behaviors are not well understood. The mechanical properties of the thin film are different from those of the bulk structure and are difficult to measure because of its handling inconvenience. Several techniques have been applied to mechanical characterization of the thin film, such as nanoindentation test, micro/nano tensile test, strip bending test, etc. In this study, we focus on the strip bending test because of its high accuracy and moderate specimen preparation efforts, and measure Au thin film, which is a very popular material in micro/nano electronic devices. Au film is deposited on Si substrate by evaporation process, of which thickness is 100nm. Using the strip bending test, we obtain elastic modulus, yield and ultimate tensile strength, and residual stress of Au thin film.

• 한국항행학회논문지
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• 제17권5호
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• pp.574-580
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• 2013

본 논문에서는 박막코팅기술의 공정은 고경도 박막과 질화층의 접합력을 높이기 위하여 적용하였다. 이 박막코팅기술은 프레스 금형에 사용되는 경도와 인성을 얻을 수 있는 복합 박막을 형성했다. 이러한 박막 코팅 생산 기술은 물리증착방법을 이용하여 진공 챔버의 진공도를 증가하고, 건파워의 투사율을 향상시켰다. 티타늄합금 타겟은 각종 정밀가공 부품에 복합박막코팅기술 개발을 통하여 성능과 표면재질을 개선하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.1-85.1
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• 2010

$Cu(In,Ga)Se_2$ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) $2.1{\times}10^{-7}{\sim}3.0{\times}10^{-7}$ Torr, indium (In) $8.0{\times}10^{-7}{\sim}9.0{\times}10^{-7}$ Torr, gallium (Ga) $1.4{\times}10^{-7}{\sim}2.8{\times}10^{-7}$ Torr, and selenium (Se) $2.1{\times}10^{-6}{\sim}3.2{\times}10^{-6}$ Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.467-468
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• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.73-73
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• 2007

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국세라믹학회지
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• 제41권2호
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• pp.102-105
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• 2004

ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.362-365
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• 1997

In the field of Micro-Mechanics, it has been known diffcult to integrate the micro-machine with sensor and source line for the conventional copper line cnanot be used in compact and small size. We developed a system to make thethin copper film as a connect line on the poyurethane pipe (2mm in diameter) by the evaporation technique. This system consists of an evaporation chamber two long branches, substrate hoider and a Linear-Rotary motion feed feedthrough. The results showed that thin copper film coated polyurethanc pipe could be applied th the small medical devices such as the micro active endoscope.