Oxidation of BON and Si-DLC Thin Films deposited by Plasma Enhanced CVD method

Plasma Enhanced CVD 법으로 증착한 BON박막과 Si-DLC 박막의 산화

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.