• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 춘계학술발표대회 논문집
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• pp.108-111
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• 2006

Recently, mobile information devices, such as cellular phone, PDA(Personal Digital Assistant, PDA) are getting smaller and thinner. Accordingly, ultra precision welding technology is required to manufacture the high performance system for use in the telecommunication industry. In this study, we propose the laser micro welding process. Using ytterbium fiber laser, a wide range of experiments have been carried out for the gold wire-to-gold thin film welding.

• Journal of electromagnetic engineering and science
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• 제4권1호
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• pp.43-49
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• 2004

A low-frequency coaxial reflectometer(LCR) with a thin-wire inner conductor is designed and constructed to measure nondestructively the absorbing performance of electromagnetic absorbers in the frequency range of 10 MHz to 200 MHz. The LCR consists of a square coaxial transmission line and a network analyzer with a time-domain measurement capability. Inherent characteristics of a square coaxial line with a thin-wire inner conductor which deteriorate the impedance matching of the input port of the LCR are addressed. And the characteristics are improved by employing a multiwire inner conductor. Measured and calculated reflection losses of a flat ferrite tile absorber are presented.

• 설비공학논문집
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• 제8권1호
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• pp.99-109
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• 1996

Experimental investigations are carried out for the characteristics of bubble rise in the Miniature Two-Phase closed Thermosyphon(MTPCT) with a thin wire insert. The working fluids applied as experimental media are of three kinds: water, methanol, and ethanol. The effects of combination of the inclination with diametric ratio $\alpha$(=d$_{0}$/D$_{I}$) on rising velocity of a large bubble in the thermosyphon are explicitly analyzed. The realm of a movable bubble and the critical value of $\alpha$ are iteratively pursued to interpret the region Figures-of-Break, rooted in the governing physics relations, according to the application of working fluid. Experimental results are compared with those of analysis and critical ranges for $\alpha$ and D$_{I}$ were ascertained from comparisons.isons.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.18-23
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• 2012

We propose and implement a single-wire communication protocol for thermal management systems using thin film thermoelectric modules for 3D IC cooling. The proposed single-wire communication protocol connects the temperature sensors, located near hot spots, to measure the local temperature of the chip. A unique ID number identifying the location of each hot spot is assigned to each temperature sensor. The prototype chip was fabricated by a $0.13{\mu}m$ CMOS MPW process, and the operation of the chip is verified.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.

• 한국통신학회논문지
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• 제18권11호
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• pp.1669-1676
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• 1993

본 논문에서는 도체 상자에 부착된 선형 모노폴(thin-straight monopole) 안테나를 wire-grid방법을 적용하여 안테나 및 도체상자를 모델링하였고, 효율적인 계산을 위해 Pocklington 적분 방정식과 모멘트 방법(Moment Method)을 사용하여, 안테나의 특성 변화를 계산하였다. 안테나 및 모델링된 도체상자에 이용된 기저함수는 PWS(Piecewise Sinusoidal)함수이고, 도체상자의 모서리에 흐르는 전류를 효과적으로 표현하기 위해, 접합기저함수(Junction Basis Function)를 사용하였다. 특히, 모서리의 꼭지점에서 전류의 연속 조건을 만족하기 위해, 접합기저 함수가 중복되도록 하였다. 안테나 및 도체상자에 흐르는 전류분포를 계산하여, 입력 임피던스 및 복사패턴을 구하였고, 기존의 결과 데이터와 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.4-7
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• 2012

Coated conductors have been developed to increase piece length and critical current for electric power applications. Otherwise, Many efforts were carried out to reduce AC loss of coated conductor for AC applications. Twisting and cabling processes are effective to reduce AC loss but, these processes can not be applied for tape shaped coated conductor. It is inevitable to have thin rectangular shape because coated conductor is fabricated by thin film deposition process on metal substrate. In this study, round shape superconducting wire was first fabricated using coated conductors. First of all, Ag coated conductor was used. coated conductor was slitted to several wires with narrow width below 1mm. 12ea slitted wires were parallel stacked on top of another until making up the square cross-section. The bundle of coated conductors was heat treated to stick on each other by diffusion bonding and then copper plated to make round shape wire. Critical current of round wire was measured 185A at 77K, self field.

• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.172-177
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• 2022

The quench voltage of the second-generation superconducting wire is affected by the resistivity characteristics of the stabilization layer. The specific resistance of the stabilization layer can be changed by the deposition process using RF magnetron sputtering. In this paper, a thin film made of a homogeneous material (Ag) and a dissimilar material (Cu) was deposited on the stabilization layer of the second-generation superconducting wire through RF magnetron sputtering. We found that the specific resistance was reduced by increasing the thickness of the stabilization layer. The reduction in the resistivity of the stabilization layer led to a decrease in the quench voltage of the second-generation superconducting wire. We suggest that various characteristic changes of the second-generation superconducting wire can be expected through the successful change in the resistivity of the stabilization layer of the proposed deposition process.