• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• 대한금속재료학회지
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• 제49권8호
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• pp.657-663
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• 2011

This study represents the results of the peel strength and surface morphology according to the preprocessing times of polyimide (PI) in a Cu/Ni/PI structure flexible copper clad laminate production process based on the polyimide. Field emission scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to analyze the surface morphology, crystal structure, and interface binding structure of sputtered Ni, Cu, and electrodeposited copper foil layers. The surface roughness of Ni, Cu deposition layers and the crystal structure of electrodeposited Cu layers were varied according to the preprocessing times. In the RF plasma times that were varied by 100-600 seconds in a preprocessing process, the preprocessing applied by about 300-400 seconds showed a homogeneous surface morphology in the metal layers and that also represented high peel strength for the polyimide. Considering the effect of peel strength on plastic deformation, preprocessing times can reasonably be at about 400 seconds.

• 융합정보논문지
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• 제11권2호
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• pp.10-15
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• 2021

본 논문에서는 먼저 습식 코팅 방법으로 페로브스카이트 (CH3NH3PbI3) 박막을 글라스 상에 형성하고, 다양한 분석 기법을 이용하여 막의 두께, 표면거칠기, 결정성, 구성성분 및 가시광 영역에서의 이 물질의 반응에 대해 논한다. 완성된 반도체 물질은 막내부에 결함(defect)이 없고 균일하며, 표면거칠기는 매우 작으며, 가시광영역에서 높은 흡수율이 관찰되었다. 다음으로 이와 같이 형성된 유무기 층에 hole 형상을 구현하기 위하여, 구멍이 일정한 간격으로 있는 메탈마스크, 페로브스카이트 물질이 코팅되어 있는 유리, 자석 순서로 되어있는 구조의 샘플을 상압플라즈마 공법을 이용하여 시간에 따른 물질에 형성되는 hole 형태의 변화를 분석하였다. 시간이 길어짐에 따라 더 많이 식각되는 것을 알 수 있으며, 이 중에서 공정 시간을 가장 오래한 샘플에 대해서는 보다 자세하게 살펴보았고, 플라즈마의 위치에 따른 차이에 의해 7영역으로 분류할 수 있었다.

• 한국분말재료학회지
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• 제30권1호
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• pp.53-64
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• 2023

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

• 비파괴검사학회지
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• 제24권5호
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• pp.508-517
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• 2004

근접장의 특성과 근접장 마이크로파 현미경의 배경이론을 설명하였고 유전체 공진기 제작에 앞서 HFSS (high frequency structure simulator)를 이용한 모의 시뮬레이션을 기술하였다. 이것을 바탕으로 원통형 유전체 공진기를 제작하여 금속탐침과 결합한 근접장 마이크로파 현미경(near field scanning microwave microscope : NSMM)을 구성하였다. 제작한 유전체 공진기의 특성은 HFSS를 이용하여 모의 실험한 결과와 비교하였다 Tip의 기하학적 모양에 따른 공간분해능과 감도(sensitivity)를 연구하였고 contrast가 가장 좋은 hybrid tip을 개발하였다. 전도도가 서로 다른 금속시료에 따른 NSMM의 반사계수의 변화를 측정하였고 실험결과와 이론적 시료의 임피던스를 비교하였다. 마지막으로 유전체 공진기를 이용한 NSMM으로 공간 분해능이 $1{\mu}m$의 Cr과 NiFe 패턴의 이미지를 비접촉, 비파괴방법으로 얻었다.

• 한국자기학회지
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• 제17권2호
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• pp.51-54
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• 2007

역스피넬 산화물 $Fe_3O_4$에 Cr을 치환하여 얻어지는 $Cr_xFe_{3-x}O_4$ 박막 시료들을 졸-겔 스핀코팅 방법을 이용하여 제작하고 그 구조적, 전자기적 특성들에 대한 측정 및 분석을 수행하였다. X선 회절 측정 결과, Cr 성분비가 증가함에 따라 격자상수가 소폭 감소하는 것이 관측되었다. 이는 Fe 이온에 비해 이온반경이 상대적으로 작은 Cr 이온이 +3의 이온수를 가지고 8면체 자리를 치환하는 것으로 설명 가능하다. 시료들에 대한 진동시료자화를 측정한 결과, Cr 성분비 증가에 따라 포화자화량이 $Fe_3O_4$에 비하여 점차적으로 감소하였는데, 이는 8면체 자리의 $Fe^{3+}(d^5)$와 $Cr^{3+}(d^3)$ 나타내는 스핀 자기능률 값의 비교를 통하여 설명 가능하다. 또한, 자기저항 효과도 Cr 성분비 증가에 따라 포화자화량과 유사한 추세로 감소하였다. $Cr_xFe_{3-x}O_4$ 박막 시료들의 보자력은 Cr 성분비 증가에 따라 증가함을 보였는데, 이는 $Cr^{3+}$ 이온의 8면체 자리 치환에 따른 자기 이방성의 증가에 기인하는 것으로 해석된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• 태양에너지
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• 제17권4호
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• pp.3-11
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• 1997

다결정 실리콘에서 결정입계는 광생성된 반송자들의 재결합 중심으로 작용할 뿐 아니라 전위장벽으로 작용하여 태양전지의 변환효율을 감소시킨다. 결정입계의 영향을 줄이기 위해 열처리, 결정입계에 대한 선택적 식각, 결정입계로 함몰전극을 형성하는 방법, 다양한 전극 구조, 초박막 금속 형성 후 전극형성 등 여러가지 요소들을 조사하였다. 질소 분위기에서 $900^{\circ}C$ 전열처리, $POCl_3$ 확산을 통한 게터링, 후면전계 형성을 위한 Al 처리로 다결정 실리콘의 결함밀도를 감소시켰다. 결정입계에서의 반송자 손실을 감소시키기 위한 기판 처리로 Schimmel 식각액을 사용하였다. 이는 texturing 효과와 함께 결정입계를 선택적으로 $10{\mu}m$ 깊이로 식각하였다. 결점입계를 우선적으로 식각한 후면으로 Al을 확산하여 후면에서의 재결합 손실을 감소시켰다. 전극 핑거(grid finger) 간격이 0.4mm인 세밀한 전극 구조에 결정입계로 $0.4{\mu}m$ 깊이로 함몰전극을 추가로 형성하여 태양전지의 단락 전류 밀도가 개선되었다. 80% 이상의 광투과율을 보인 20nm 두께의 크롬 박막 형성으로 직렬 저항을 감소시켰다. 본 논문은 저가의 고효율, 지상 전력용 태양진지를 위해 결정입계에 대한 연구를 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.