• 전기전자학회논문지
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• 제23권2호
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• pp.375-379
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• 2019

Zn와 Sn의 원자비가 2:1인 타겟을 고주파 스파터링하여 $ZnO-SnO_2(ZTO)$박막을 증착하고 열처리에 따른 구조적 특성변화를 조사하였다. 이 ZTO박막을 활성층으로 사용하여 투명박막트랜지스터(TTFT)를 제조하였다. 약 100 nm 두께의 $SiO_2$위에 100 nm의 $Si_3N_4$막을 기른 후 TTFT의 게이트 절연막으로 채택하였다. TTFT의 전달 특성을 통해 이동도, 문턱전압, 작동전류-차단전류 비($I_{on}/I_{off}$), 계면트랩밀도를 구하였다. 기판 가열 및 후속 열처리가 ZTO TTFT의 특성 변화에 미치는 영향을 분석하였다.

• 열처리공학회지
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• 제30권3호
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• pp.113-116
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• 2017

100 nm thick Sn doped ZnO (ZTO) single layer, 15 nm thick Ag buffered ZTO (ZTO/Ag), Ag intermediated ZTO (ZTO/Ag/ZTO) and Ag capped ZTO (Ag/ZTO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering and then the influence of the Ag thin film on the optical and electrical properties of ZTO films were investigated. As deposited ZTO thin films show the visible transmittance of 81.8%, while ZTO/Ag/ZTO trilayer films show a higher visible transmittance of 82.5% in this study. From the observed results, it can be concluded that the 15 nm thick Ag interlayer enhances the opto-electrical performance of ZTO thin films effectively for use as flexible transparent conducting oxides films in various opto-electrical applications.

• 한국세라믹학회지
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• 제48권6호
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• pp.487-492
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• 2011

The effect of the application of lanthanum strontrium manganite and yttria-stabilized zirconia (LSM-YSZ) nano-composite fabricated by pulsed laser deposition (PLD) as a cathode of solid oxide fuel cell (SOFC) is studied. A gradient-structure thin-film cathode composed of 1 micron-thick LSM-YSZ deposited at an ambient pressure ($P_{amb}$) of 200 mTorr; 2 micron-thick LSM-YSZ deposited at a $P_{amb}$ of 300 mTorr; and 2 micron-thick lanthanum strontium cobaltite (LSC) current collecting layer was fabricated on an anode-supported SOFC with an ~8 micron-thick YSZ electrolyte. In comparison with a 1 micron-thick nano-structure single-phase LSM cathode fabricated by PLD, it was obviously effective to increase triple phase boundaries (TPB) over the whole thickness of the cathode layer by employing the composite and increasing the physical thickness of the cathode. Both polarization and ohmic resistances of the cell were significantly reduced and the power output of the cell was improved by a factor of 1.6.

• 전자공학회논문지D
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• 제35D권5호
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국재료학회지
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• 제18권10호
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• pp.515-520
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• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• 대한기계학회논문집B
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• 제27권9호
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• pp.1220-1228
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• 2003

The mirage technique is proved to be powerful in measuring the thermal diffusivity of materials. In particular, its contactless nature makes it suitable for delicate samples and microscale structures. In this study, thermal-wave-coupling method is developed in a general form for both thermally thin and thick samples. In the suggested measuring scheme, the probe beam can be positioned close to the pump beam and the absolute position need not be measured. Therefore the new scheme provides a relatively simple yet effective way to determine the thermal diffusivity of thermally thick samples. Thermal diffusivities of bulk samples like Ni and Al were measured and the characteristics of mirage signal for a thin film were observed by using the mirage experimental setup. The apparent thermal diffusivity was measured by varying such parameters as probe beam height, size of pump beam, power of pump beam, and surface condition of sample. From the practical standpoint, it is shown that the size of the pump beam is the most important factor for accurate thermaldiffusivity measurement. Experiments using thin-film samples show that the thermal diffusivity of a substrate covered with thin film can be measured by photothermal mirage signals.

• Progress in Superconductivity
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• 제8권1호
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• pp.27-32
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• 2006

[$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.