• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.413-418
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• 1998

Electrical and Thermoelectric Properties of$ SbI_{3}$-doped 85% 85% $BiTe_{2}$$Se_{3}$ 단결정에서 전하 이동에 대한 살란인자는 0.1이었으며, 전자이동도와 정공이동도의 비($\mu_{e}$ /$\mu_{h}$ )는 1.45이었다. $SbI_{3}$의 첨가량이 증가할수록 전자 농도의 증가로 Seebek 계수와 전기비저항이 감소하며, Seebeck 계수와 전기비저항이 최대값을 나타내는 온도가 고온으로 이동하였다. $SbI_{3}$를 첨가한 85%$Bi_{2}$$Te_{3}$단결정에서 성능지수의 최대값은 $SbI_{3}$를 0.1 wt%첨가한 조성에서 $2.0 x 10^{-3}$ K이었다.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.822-828
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• 2018

P-type Ce/Yb-filled skutterudites were synthesized, and their charge transport and thermoelectric properties were investigated with partial double filling and charge compensation. In the case of $(Ce_{1-z}Yb_z)_{0.8}Fe_4Sb_{12}$ without Co substitution, the marcasite ($FeSb_2$) phase formed alongside the skutterudite phase, but the generation of the marcasite phase was inhibited by increasing Co concentration. The electrical conductivity decreased with increasing temperature, exhibiting degenerate semiconductor behavior. The Hall and Seebeck coefficients were positive, which confirmed that the specimens were p-type semiconductors with holes as the major carriers. The carrier concentration decreased as the concentration of Ce and Co increased, which led to decreased electrical conductivity and increased Seebeck coefficient. The thermal conductivity decreased due to a reduction in electronic thermal conductivity via Co substitution, and due to decreased lattice thermal conductivity via double filling of Ce and Yb. $(Ce_{0.25}Yb_{0.75})_{0.8}Fe_{3.5}Co_{0.5}Sb_{12}$ exhibited the greatest dimensionless figure of merit (ZT = 0.66 at 823 K).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.265-266
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• 2006

It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

• Proceedings of the SAREK Conference
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• 2006.06a
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• pp.1144-1149
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• 2006

Electric power is generated by Seeback Effect if there is thermal difference in pettier module. Peltier module is composed by alumina, Bi-Te semiconductor and insulation (or air). If load is increased in pettier module, the alumina of module will be destroyed. One of the preventing method of module destruction is using damper between module and heat source. But the electric Power is dropped because of decrease of thermal difference, if thermal conductivity of damper was tourer than other thermoelectric materials. We design, Polymer Pad for enhancing thermoelectric porter. As the result of these experiment, Polymer Pad is more superior than the Rubber in the stability and thermal conduction.

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.2099-2106
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• 2003

In this paper, a novel fast response NDIR analyzer (FRNDIR), which uses an electrically pulsed semiconductor emitter and dual type PbSe detector for the PPM-level detection of carbon dioxide (CO$_2$) at a wavelength of 4.28 $\mu\textrm{m}$, is described. Modulation of conventional NDIR energy typically occurs at 1 to 20 Hz. To achieve real time high-speed measurement, the new analyzer employs a semiconductor light emitter that can be modulated by electrical chopping. Updated measurements are obtained every one millisecond. The detector has two independent lead selenide (PbSe) with IR band pass filters. Both the emitter accuracy and the detector sensitivity are increased by thermoelectric cooling of up to -20 degrees C in all semiconductor devices. Here we report the use of semiconductor devices to achieve improved performance such that these devices have potential application to CO$_2$ gas measurement and, in particular, the measurement of fast response CO$_2$ concentration at millisecond level.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1114-1115
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• 2006

The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.292-296
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• 2003

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.