• Transactions of the KSME C: Technology and Education
• /
• v.3 no.4
• /
• pp.265-271
• /
• 2015

The bonding process should be achieved in vacuum environment to avoid air bubble. In this study, we studied about pressure uniformity that became an issue in thermo compression bonding usually. Uniform press is realized by the method that use air spring and metal form spring. The concept of uniform press using air spring is removed except pressing direction in the press processing so angle between the vector of pressure surface and the pressure axis is parallel automatically. Air spring compensate the errors of machining and assembly. Metal form compensate the thermal deformation and flatness error.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.12
• /
• pp.919-923
• /
• 2010

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM -1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with $330^{\circ}C$ and 500 N thenno-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.9
• /
• pp.488-493
• /
• 2004

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining(ECDM) for glass machining. An array of 72 Cu electrodes is used to machine Borofloat33 glass. The height and diameter of a Cu electrode are 400 $\mu\textrm{m}$ and 100 $\mu\textrm{m}$ respectively. It is fabricated by ICP-RIE, Au-Au thermo-compression bonding, and copper electroplating. Borofloat33 glass is machined by the fabricated copper electrode array in 60 seconds at 55 V. The surface roughness of the machined glass is measured and the machined glass is anodically bonded with silicon.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.11-18
• /
• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.