• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly[2-(2'-ethylhexyloxy )-5-methoxy-1,4-pheny lenevinylene])/Al(aluminium) and ITO/MEH-PPV/$Alq_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that turn on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness $200\AA$ of $Alq_3$ is shown electrical properties that turn on voltage is about 11 V, and current density decreases as a function of increasing temperature.ࠀȀ 耀Ѐ€

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly [2-(2'-ethylhexyloxy)-5-methoxy-1, 4-phenylenevinylene])/Al(aluminium) and ITO/MEH-PPV/Alq$_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that alum on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness 200 $\AA$ of Alq$_3$ is shown electrical properties that turn on voltage is about 11V, and current density decreases as a function of increasing temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.9-19
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• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1552-1553
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• 2006

A thermionic gun of injector linac for pohang accelerator laboratory is required to generate beam pulse width less than 1 nsec. The gun uses cathode-grid assembly(EIMAC Y824) and operates up to 80 kV anode voltage. In order research characteristics of the electron gun, emission current from gun wear measured by the wall current monitor. In this paper the pulser system and characteristics of the emission current in region from 30 mA to 15 A are described.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.101-107
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• 1990

In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1815-1821
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• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.865-868
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• 2006

In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.869-872
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• 2006

In this paper, the threshold voltage roll-off been analyzed for nano structure double gate FinFET. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel- framers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off Is very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed.