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Analysis of Dimension Dependent Subthreshold Swing for FinFET Under 20nm  

Jung, Hak-Kee (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.10, no.10, 2006 , pp. 1815-1821 More about this Journal
Abstract
In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.
Keywords
FinFET; subthreshold swing; thermionic current; tunneling current;
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Times Cited By KSCI : 1  (Citation Analysis)
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