• 제목/요약/키워드: Thermal-structure Stability

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Nano-scale CMOS를 위한 Ni-germano Silicide의 열 안정성 연구 (Study of Ni-germano Silicide Thermal Stability for Nano-scale CMOS Technology)

  • 황빈봉;오순영;윤장근;김용진;지희환;김용구;왕진석;이희덕
    • 한국전기전자재료학회논문지
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    • 제17권11호
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    • pp.1149-1155
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    • 2004
  • In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

커빅 커플링을 적용한 밀-턴 스핀들의 열-구조 안정성 평가에 관한 해석적 연구 (An Analytical Study on the Thermal-Structure Stability Evaluation of Mill-Turn Spindle with Curvic Coupling)

  • 이춘만;정호인
    • 한국기계가공학회지
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    • 제19권1호
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    • pp.100-107
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    • 2020
  • As demand for high value-added products with hard materials increases, the line center is used for producing high value-added products in many industries such as aerospace, automobile fields. The line center is a key device for smart factory automation that can improve the production efficiency and the productivity. Therefore, the development of a mill-turn line center is necessary to produce high value-added products with complex shapes flexibly. In the mill-turn process, a milling process and a turning process are combined. In particular, the turning process needs to increase the rigidity of the spindle. The purpose of this study is to analyze the thermal-structural stability through thermo-structural coupled analysis for a mill-turn spindle with a curvic coupling. The maximum temperature and thermal stability of the spindle were analyzed by thermal distribution. In addition, the thermal deformation and thermal-structural stability of the spindle were analyzed through thermo-structural coupled analysis.

신소재 복합재료를 이용한 우주용 카메라 구조의 고안정화 설계에 관한 연구 (Study on spaceborne telescope structure with high stability using new composite materials)

  • EUNG-SHIK LEE;SUN-HEE WOO
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2003년도 추계학술발표대회 논문집
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    • pp.132-136
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    • 2003
  • A Multi-Spectral Camera (MSC) is the payload of KOMPSAT-2 which is designed for earth imaging in visible and near-Infrared region on a sun-synchronous orbit. The telescope in the MSC is a Ritchey-Chretien type with large aperture. The telescope structure should be well stabilized and the optical alignment should be kept steady so that best images can be achieved. However, the MSC is exposed to adverse thermal environment on the orbit which can give impacts on optical performance. Metering structure which is exposed to adverse space environment should have tight requirement of low thermal expansion and hygroscopic stability. In order to meet those stability requirements in addition to fundamental structural ones telescope structure was designed with newly developed graphite-cyanate composite which has high tensile modulus, high thermal conductivity and low moisture absorption compared with conventional graphite-epoxy composite. In this paper, space-borne telescope structure with new composite material will be presented and fulfillment of stability requirements will be verified with designed structure.

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Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs

  • Zhang, Ying-Ying;Lim, Sung-Kyu;Lee, Won-Jae;Zhong, Zhun;Li, Shi-Guang;Jung, Soon-Yen;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.15-16
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    • 2006
  • The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at $500^{\circ}C$ for 30 sec. It was found that the thermal stability of nickel silicide depends on the stress induced by the nitride capping layer. In the case of Ni (10 nm) structure, the high compressive sample shows the best thermal stability, whereas in the case of Ni/Co/TiN (7/3/25 nm) structure, the high compressive sample shows the worst thermal stability.

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나노급 CMOSFET을 위한 니켈-코발트 합금을 이용한 니켈-실리사이드의 열안정성 개선 (Thermal Stability Improvement of Ni-Silicide using Ni-Co alloy for Nano-scale CMOSFET)

  • 박기영;정순연;한인식;장잉잉;종준;이세광;이가원;왕진석;이희덕
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.18-22
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    • 2008
  • In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.

Nano-CMOS에서 NiSi의 Dopant 의존성 및 열 안정성 개선 (Analysis of Dopant Dependency and Improvement of Thermal stability for Nano CMOS Technology)

  • 배미숙;오순영;지희환;윤장근;황빈봉;박영호;박성형;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.667-670
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    • 2003
  • Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

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IrMn 교환결합층을 갖는 스핀밸브막에서의 열적안정성과 자구구조 관찰 (Thermal Stability and Domain Structure in Spin Valve Films with IrMn Exchange Biased Layers)

  • 이병선;정정규;이찬규;구본흔;야스노리 하야시
    • 한국재료학회지
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    • 제14권2호
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    • pp.94-100
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    • 2004
  • We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

Evaluation of thermal stability of quasi-isotropic composite/polymeric cylindrical structures under extreme climatic conditions

  • Gadalla, Mohamed;El Kadi, Hany
    • Structural Engineering and Mechanics
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    • 제32권3호
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    • pp.429-445
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    • 2009
  • Thermal stability of quasi-isotropic composite and polymeric structures is considered one of the most important criteria in predicting life span of building structures. The outdoor applications of these structures have raised some legitimate concerns about their durability including moisture resistance and thermal stability. Exposure of such quasi-isotropic composite/polymeric structures to various and severe climatic conditions such as heat flux and frigid climate would change the material behavior and thermal viability and may lead to the degradation of material properties and building durability. This paper presents an analytical model for the generalized problem. This model accommodates the non-linearity and the non-homogeneity of the internal heat generated within the structure and the changes, modification to the material constants, and the structural size. The paper also investigates the effect of the incorporation of the temperature and/or material constant sensitive internal heat generation with four encountered climatic conditions on thermal stability of infinite cylindrical quasi-isotropic composite/polymeric structures. This can eventually result in the failure of such structures. Detailed critical analyses for four case studies which consider the population of the internal heat generation, cylindrical size, material constants, and four different climatic conditions are carried out. For each case of the proposed boundary conditions, the critical thermal stability parameter is determined. The results of this paper indicate that the thermal stability parameter is critically dependent on the cylinder size, material constants/selection, the convective heat transfer coefficient, subjected heat flux and other constants accrued from the structure environment.

A Study on Thermal Stability Improvement in Ni Germanide/p-Ge using Co interlayer for Ge MOSFETs

  • Shin, Geon-Ho;Kim, Jeyoung;Li, Meng;Lee, Jeongchan;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.277-282
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    • 2017
  • Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

나노급 Ge-MOSFET를 위한 Ni-N(1%)을 이용한 Ni-germanide의 열 안정성 개선 (Thermal Stability Improvement of Ni-Germanide Using Ni-N(1%) for Nano Scale Ge-MOSFET Technology)

  • 임경연;박기영;장잉잉;이세광;종준;정순연;이가원;왕진석;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.17-18
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    • 2008
  • In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

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