• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.678-682
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• 2015

The electrical property of polymer matrix composites with added carbon powder is studied based on the temperature dependency of the conduction mechanism. The temperature coefficient of the resistance of the polymer matrix composites below the percolation threshold (x) changed from negative to positive at 0.20 < x < 0.21; this trend decreased with increasing of the percolation threshold. The temperature dependence of the electrical property(resistivity) of the polymer matrix composites below the percolation threshold can be explained by using a tunneling conduction model that incorporates the effect of the thermal expansion of the polymer matrix composites into the tunneling gap. The temperature coefficient of the resistance of the polymer matrix composites above the percolation threshold has a positive value; its absolute value increased with increasing volume fraction of carbon powder. By assuming that the electrical conduction through the percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of the carbon power, the temperature dependency of the resistivity above the percolation threshold can be well explained without violating the universal law of conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.216-221
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• 2016

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature ($300^{\circ}C$) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.164.2-164.2
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• 2010

KEPCO에서는 발전소로부터 생산되는 전력을 각 가정에 공급하기 위하여 전력선을 설치하고 있다. 이 전력선은 지상과 지중에 동시에 설치되고 있으며, 지상에 위치한 전력선을 가공선이라 한다. 지중에 설치된 전력선을 지중선이라 하며, 지중선을 설치하기 위한 공사를 지중화공사라 한다. 전력선은 전력이 통전될 때 일정한 온도 이상의 열이 발생하게 되며 이 열이 신속하게 외부로 빠져나가야지만 전력수송효율이 떨어지지 않게 된다. 지중화공사는 대부분 도로를 재굴착하여 설치하게 되며, 전력선을 설치한 후 주변 되메움재로는 모래를 이용하고 있다.하지만 최근 들어 모래의 수급이 딸리고, 가격이 높아지고 있는 관계로 이의 대체재료가 필요한 실정이다. 이에 본 연구에서는 전력선 되메움재인 모래의 대체재료로 건설폐기물의 일종이었던 순환골재를 이용하기 위하여 열저항특성을 분석하였다. 이미 순환골재는 2005년부터 공공 공사에 의무적으로 사용하도록 규정이 되어 있어 도로 또는 콘크리트 골재로 사용하고 있다. 순환골재를 전력선 되메움재로 사용하기 위해서는 열저항온도(thermal resistivity)가 $120^{\circ}C$-cm/W 이하가 되어야만 전력선 효율이 떨어지지 않기 때문에 이를 만족하는 것이 매우 중요하다. 이를 위해 QTM-500 장비를 이용하여 순환골재의 열저항 특성실험을 시행하였다. 실험의 원활한 수행을 위하여 순환골재의 입도는 5.0mm 이하로 제한하였으며, 인자로는 다짐도와 함수비를 중요한 인자로 선택하였다. 분석결과, 다짐도 및 함수비는 순환골재의 열저항온도에 영향을 미치는 주인자로 나타났으며, 일부 교호작용도 존재하는 것으로 나타났다. 향후 실험결과를 바탕으로 현장 실증실험을 수행할 예정이며, 본 연구결과는 KEPCO의 순환골재 이용기준수립에 활용할 예정이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.29-33
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• 2000

The amorphous tungsten nitrides, WNx, film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40at%. The amorphous $W_{67}N_{33}$ film was crystallized into low resistivity $\alpha$-tungsten phase with equiaxed grains and excess nitrogen after the rapid thermal annealing for 1min at 1273K, which was similar to the resistivity of the sputtered pure tungsten film. The excess nitrogen was depleted from $\alpha$-tungsten crystals and then segregated at $\alpha$-tungsten/poly-Si interface. The segregated nitrogen has favored the formation of the homogeneous diffusion barrier layer comprised of silicon nitride, $Si_3N_4$, nano-crystals, which undertaken the inhibition of the high resistivity tungsten silicide reaction.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.48-49
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• 2006

Highly conductive and transparent films of Ga-doped ZnO have been prepared by pulsed laser deposition using a ZnO target with 3 wt% ${Ga_2}{O_3}$ dopant. Films with the resistivity as low as $3.3{\times}10^{-4}{\Omega}cm$ and the transmittance above 80 % at the wavelength of 400 to 800 nm can be fabricated on glass substrate at room temperature. It is shown that a stable resistivity for the use in oxidation ambient at high temperature can be obtained for the films. Heat treatments were performed to examine the thermal stability of ZnO and GZO films at ptemperature range from $100^{\circ}C$ to $400^{\circ}C$ in $O_2$ ambient for 30 minutes. The resistivity of ZnO film annealed at $400^{\circ}C$ increased by two orders of magnitude, in case of GZO film was relatively stable up to at $400^{\circ}C$. For practical applications at high temperatures the thermal stability of resistivity of GZO thin films might become an advantage for transparent electrodes.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.644-648
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• 2009

Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.