• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.270-275
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• 2017

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.17 no.5
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• pp.459-467
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• 2005

The effect of anti freezing solution liquid film on the frost prevention is experimentally investigated. It is desirable that the antifreezing solution spreads widely on the heat exchanger surface forming thin liquid film to prevent frost nucleation and reduce the thermal resistance across the film. A porous layer coating technique is adopted to improve the wettedness of the anti freezing solution on a parallel plate heat exchanger. The antifreezing solution spreads widely on the heat exchanger surface with 100 $\mu$m thickness by the capillary force resulting from the porous structure. It is observed that the antifreezing solution liquid film prevents a parallel plate heat exchanger from frosting. The reductions of heat and mass transfer rate caused by thin liquid film are only $1\~2\%$ compared with those for non-liquid film surface.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Structural Engineering and Mechanics
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• v.77 no.5
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• pp.673-689
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• 2021

This paper addresses the efficiency of thermal insulation layers applied to protect structural elements strengthened by fiber-reinforced polymers (FRP) in the case of fire event. The paper presents numerical modeling and nonlinear analysis of reinforced concrete (RC) columns externally strengthened by FRP and protected by thermal insulation layers when subjected to elevated temperature specified by standard fire tests, in order to predict their residual capacity and fire endurance. The adopted numerical approach uses commercial software includes heat transfer, variation of thermal and mechanical properties of concrete, steel reinforcement, FRP and insulation material with elevated temperature. The numerical results show good agreement with published results of full-scale fire tests. A parametric study was conducted to investigate the influence of several variables on the structural response and residual capacity of insulated FRP-confined columns loaded by service loads when exposed to fire. The residual capacity of FRP-confined RC column was affected by concrete grade and insulation material and was shown to improve substantially by increasing the concrete cover and insulation layer thickness. By increasing the VG insulation layer thickness 15, 32, 44, 57 mm, the loss in column capacity after 5 hours of fire was 30%, 13%, 7% and 5%, respectively. The obtained results demonstrate the validity of the presented approach for estimation of fire endurance and residual strength, as an alternative for fire testing, and for design of fire protection layers for FRP-confined RC columns.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.218-223
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• 2019

To prevent the low heating effect of heating system caused by the high sheet resistance of CVD graphene, multi-layered graphene was laminated to implement a Transparent plane heating system with good optical properties of low-resistance. Low-resistance plane heating system implemented by $300{\times}400{\times}5mm$ heating plane laminated multi-layered CVD graphene film and PWM control system to drive efficient power. A plane resistance value of $85.5{\Omega}/sq$ was measured on average for 4-layer CVD graphene film used as a heating plane. Thus, the transfer by thermal film as the method of implementing low-resistance CVD graphene is reasonable. The experimental results of heat test show that an average heat-rise rate in low-resistance, transperent plane heating system using CVD graphene is $10^{\circ}C/min$ and has an optical transmittance rate of 86.44%. Therefore, the proposed heating system is applicable to large window glass and vehicle heating window-shild-glass.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.306-310
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• 2018

In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1982-1984
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• 1996

In this paper, we have evaluated the physical characteristicsof the Pt/Cr bilayer, fabricated the micro hot plate by using the Pt/Cr bilayer and E-beam evaporated oxide as a passivation layer, and simulated the thermal distribution by using the commercial software FIDAP. From the researches the sheet resistance of Pt/Cr bilayer didn't be affected by the Cr layer thickness. This results was considered due to the Cr-oxide resided at the interface between Pt and Cr layer. After manufacturing the hot plate, we measured its temperature by type k thermo-couple and I.R. thermo-vision system. In those experiments, the emission coefficient( ${\varepsilon}$ ) of the E-beam evaporated oxide was 0.5 and the temperature of centural region was reached about $305\;^{\circ}C$ at 1.3 watts. The temperature simulation obtained by FIDAP commercial package stewed that the temperature of centural region was about $311\;^{\circ}C$ after 5 sec.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.10-18
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• 2011

In order to develop highly-integrated RGBY(Red, Green, Blue, Yellow) LED light, a high thermal radiation ceramic package was manufactured, and the encapsulation process was applied with a vacuum printing encapsulation system(VPES). After the completion of vacuum printing, the shape of the encapsulation layer could be controlled by heat treatment during the curing process, and the optical power became highly increased as the encapsulation layer approached a dome shape. The optical characteristics involved in a Correlated Color Temperature(CCT), a Color Rendering Index (CRI), and the efficiency of RGBY LED light were able to be identified by the experimental designing method. Regarding the characteristics of the white light of RGBY LED light, which were measured on the basis of the aforementioned optical characteristics, CRI posted 88, CCT recorded 5,720[$^{\circ}K$], and efficiency exhibited 52[lm/W]. The chip temperature of RGBY LEDs was below 55[$^{\circ}C$] when the consumption power of LED chips was 0.1[W] for the red, 0.3[W] for the green, 0.08[W] for the blue, and 0.24[W] for the yellow. Also, the thermal resistance of the highly-integrated RGBY LED light measured by T3Ster was 2.3[K/W].