Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Study on Self-Organized Ru Dots Using ALD and Low Temperature Rapid Thermal Annealing Process

ALD와 저온 RTA를 이용한 자가정렬 Ru 응집체의 제조와 물성

  • Park, Jongseung (Department of Materials Science and Engineering, University of Seoul) ;
  • Noh, Yunyoung (Department of Materials Science and Engineering, University of Seoul) ;
  • Song, Ohsung (Department of Materials Science and Engineering, University of Seoul)
  • 박종승 (서울시립대학교 신소재공학과) ;
  • 노윤영 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Received : 2011.12.29
  • Published : 2012.08.25
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Abstract

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

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