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http://dx.doi.org/10.5369/JSST.2018.27.5.306

Variation in IR Absorption Characteristics of a Bolometer by Resistive Hole-array Patterns  

Kim, Tae Hyun (Department of Nanostructure Technology, National Nanofab Center)
Oh, Jaesub (Department of Nanostructure Technology, National Nanofab Center)
Park, Jongcheol (Department of Nanostructure Technology, National Nanofab Center)
Kim, Hee Yeoun (Department of Nanostructure Technology, National Nanofab Center)
Lee, Jong-Kwon (Department of Nanostructure Technology, National Nanofab Center)
Publication Information
Journal of Sensor Science and Technology / v.27, no.5, 2018 , pp. 306-310 More about this Journal
Abstract
In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.
Keywords
Microbolometer; hole-array; amorphous-Silicon; thermal mass; wavelength transition;
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