• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.683-687
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• 2017

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.63-70
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• 2023

오늘날 심각한 환경 오염과 에너지의 중요성으로 전력 반도체의 중요도가 지속적으로 높아지고 있다. 특히 wide band gap(WBG)소자 중 하나인 SiC-MOSFET은 우수한 고전압 특성을 가지고 있어 그 중요도가 매우 높다. 하지만 SiC-MOSFET의 전기적 특성이 열에 민감하기 때문에 패키지를 통한 열 관리가 필요하다. 본 논문에서는 기존 전력 반도체에서 사용하는 direct bonded copper(DBC) 기판 방식이 아닌 insulated metal substrate(IMS) 방식을 제안한다. IMS는 DBC에 비해 공정이 쉬우며 coefficient of thermal expansion (CTE)가 높아서 비용과 신뢰성 측면에서 우수하다. IMS의 절연층인 dielectric film의 열전도도가 낮은 문제가 있지만 매우 얇은 두께로 공정이 가능하기 때문에 낮은 열 전도도를 충분히 극복할 수 있다. 이를 확인하기 위해서 이번 연구에서는 electric-thermal co-simulation을 수행하였으며 검증을 위해 DBC 기판과 IMS를 제작하여 실험하였다.

• IEIE Transactions on Smart Processing and Computing
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• 제4권5호
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• pp.318-323
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• 2015

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• 전자공학회논문지A
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• 제33A권10호
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.95-99
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• 2018

최근 고집적 고출력 전자 패키지의 효율적인 열전달을 위한 기판 및 방열소재로서 절연성 고열전도 필름의 수요가 커지고 있어, 알루미나, 질화알루미늄, 질화보론, 탄소나노튜브 및 그래핀 등의 고열전도 필러소재를 사용한 고방열 복합소재에 대한 많은 연구가 이루어지고 있다. 그 중에서도 육방정 질화보론(h-BN) 나노시트가 절연성 고열전도 필러 소재로서 유력한 후보 물질로 선택되고 있다. 본 연구는 이 h-BN 나노시트와 PVA로 된 세라믹/폴리머 복합체 필름의 방열특성 향상에 관한 것이다. h-BN 나노시트는 h-BN 플레이크 원료 분말을 유기용매를 사용한 볼밀링과 초음파 처리에 의한 물리적 박리공정으로 만들었으며, 이를 사용한 h-BN/PVA 복합 필름을 제조한 결과 성형된 복합필름의 면방향과 두께방향 열전도도는 50 vol%의 필러함량에서 각각 $2.8W/m{\cdot}K$ 및 $10W/m{\cdot}K$의 높은 열전도도가 나타났다. 이 복합필름을 PVA의 유리전이온도 이상에서 일축 가압하여 h-BN 판상분말의 얼라인먼트를 향상시킴으로써 면방향 열전도도를 최대 $13.5W/m{\cdot}K$까지 증가시킬 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.418-418
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• 2012

Synthesis of nanocrystalline diamond powder was investigated via a gas-to-particle scheme using the hot filament chemical vapor deposition. Effect of substrate surface seeding by nano diamond powder, and that of the electrical conductance of the substrate were studied. The substrate temperature, methane content in the precursor gas, filament-substrate distance and filament temperature were $670^{\circ}C$, 5% methane in hydrogen, 10 mm and $2400^{\circ}C$, respectively. The powder formation by gas-to-particle mechanism were greatly enhanced by the substrate seeding by the nano diamond powder. It was attributed to the removal of the electrostatic force between the substrate and the seeded nano diamond particle by the thermal electron shower from the hot filament, via the depolarization of the substrate surface or the attached diamond powder and subsequent levitation into the gas phase to serve as the gas-phase nucleation site. The powder formation was greatly favoured by the conducting substrate relative to the insulating substrate, which proved the actual effect of the electric static force in the powder formation.

• 한국표면공학회지
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• 제31권1호
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• pp.12-23
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• 1998

The Thermal Barrier Coating(TBC) has been used to improve the heat barrier and tribological properties of the aircraft engine and the automobile engine in high temperature. Especially, the high temperature tribological propertied of the cylinder haed and the piston crown of diesel engine was emphasized. Therefore, the purpose of this work was to evaluate the microstructure, tribological propeer in high tempearmal shock resistance and bonding strength of five layer functionally gradient TBC for the applications. The five layerwere composed with 100% ceramic insulating later, 75(ceramic):25 (metal) layer, 50:50 layer, 25:75 layer and 100% metal bonding layer to redude the thermal stress. the YSL and MSL poweders were the insulation ceramics powers. The NiCrAly, Inconel625 and SUS powders were the bonding and mixingg powders for plasma spray process. According to the result of high temperature wear test, the wera resistance of YSZ/NiCrAlY siytem was most out standing at 600 and $800^{\circ}C$. At $400^{\circ}C$, the wear resistance of YSZ/Inconel system was better than others. Wear volume at other temperature because of the low temperature degration of zirconia. The thermal shock mechanism of 5 later is the vertical crack gegration in insulating layer. this means that the initial cracks were generated in the top layer, and then developed into the composite layers during thermal shock test. Finally, these cracks werereached to the interface of coating and substrate and also, these vertioal cracks join with the horizontal cracks of the each layers. The bonding strength of YSZ/NiCrAlY and YSZ/Inconel 5 layer system is better than other 5layer systems. The theramal shock resistance of thermal barrier coating s with 5 layer system is better than that of 3 layers and 2 layers.

• KIEAE Journal
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• 제13권5호
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• pp.67-77
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• 2013

Based on the increasing demand for a solution to reduce thermal load, extensive green roofs have great opportunity for application to existing roofs due to their light-weight and easy maintenance. The present study delivers data regarding thermal behavior and heat reduction potential in relation to vegetation coverage between green roof types. 1) In the hottest hour in a day, green roofs showed considerable potential to mitigate heat load in roof environments, which can be up to $10^{\circ}C$ difference. 2) Compared to conventional cement roofs, the extensive green roofs only have a slight potential to cool the air over green roofs. By statistical analysis of linear regression, green coverage has little to do with the reduction of air temperature; the cooling effect was proven only in nighttime. 3) Green roofs act as an insulating roof membrane, the inner substrate of green roofs remained cooler than cement roof surfaces in the daytime, but in the nighttime the green roofs generally were warmer than the cement roof surfaces. 4) The variable of vegetation coverage resulted in no significant difference in thermal behavior in the air, but had the greatest effect in keeping the substrate cool in the daytime. The high vegetation coverage also hindered the rapid cooling of the substrate in the nighttime, and therefore was warmer than other measured temperatures. In order to draw a clear conclusion to combat urban heat island effect with extensive green roofs, the experiment needs to be applied on a larger scale.

• 센서학회지
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• 제8권5호
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• pp.421-426
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• 1999

본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.