• Title/Summary/Keyword: Thermal diffusion coefficient

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A Study on Implanted and Annealed Antimony Profiles in Amorphous and Single Crystalline Silicon Using 10~50 keV Energy Bombardment (비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.683-689
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    • 2015
  • For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

The Theoretical Study of the Measuring Thermal Diffusivity of Semi-Infinite Solid Using the Photothermal Displacement

  • Jeon, PiIsoo;Lee, Kwangjai;Yoo, Jaisuk;Park, Youngmoo;Lee, Jonghwa
    • Journal of Mechanical Science and Technology
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    • v.18 no.10
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    • pp.1712-1721
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    • 2004
  • A method of measuring the thermal diffusivity of semi-infinite solid material at room temperature using photothermal displacement is proposed. In previous works, within the constant thickness of material, the thermal diffusivity was determined by the magnitude and phase of deformation gradient as the relative position between the pump and probe beams. In this study, however, a complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in semi-infinite solid materials. The influence of parameters, such as, radius and modulation frequency of the pump beam and the thermal diffusivity, was studied. We propose a simple analysis method based on the zero -crossing position of real part of deformation gradient and the minimum position of phase as the relative position between two beams. It is independent of parameters such as power of pump beam, absorption coefficient, reflectivity, Poisson's ratio, and thermal expansion coefficient.

Derivation of the refractive index profile equation of K-Na ion-exchange waveguide by a rapid thermal method (급열법에 의한 K-Na 이온교환 도파로의 굴절율 분포식산출)

  • 강승민
    • Proceedings of the Optical Society of Korea Conference
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    • 1990.02a
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    • pp.237-241
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    • 1990
  • A detailed theoretical and experimental study of k-na exchange in soda lime silicate glasses by RTP is presented. Concentration profiles i.e. index profiles are given by complementary error function added Gaussian function. The estimated diffusion coefficient is 1.54${\mu}{\textrm}{m}$2/min.

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Thermal diffusion properties of Zn, Cd, S, and B at the interface of CuInGaSe2 solar cells

  • Yoon, Young-Gui;Choi, In-Hwan
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.52-58
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    • 2013
  • Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

A Study on the Limit Capacity Calculation for Thermal plant based on Air Pollution Control (대기오염에 따른 화력발전소의 한계용량산전에 관한 연구)

  • Yim Han Suck
    • 전기의세계
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    • v.26 no.2
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    • pp.95-98
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    • 1977
  • Commercially available fuel oil for power plant contains relatively much sulphur, which means accordingly high content sulphur deoxide in exhaust gas. Sulphur deoxide has been identified as the worst-pollutant caused by thermal power generation. This paper primarily deals with the stack gas diffusion effects of various parameters, namely vertical stability, wind velocity, exhaust gas velocity, stack height, etc., on the ground concentration. thereof the relation between stack height and maximum plant capacity is analyzed from the standpoint of air pollution prevention. The limit capacity is calculated by means of mean concentration introducing Mead and Lowry coefficient respectively.

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A Study Effect of Mixed Solvents on the Retention of Polystyrenes Using Thermal Field-Flow Fractionation (열장 흐름 분획법에 의한 폴리스티렌의 머무름에 미치는 혼합용매의 영향에 관한 연구)

  • Lee, Dai-Woon;Jeon, Sun-Joo;Park, Won-Choul
    • Analytical Science and Technology
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    • v.6 no.5
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    • pp.453-462
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    • 1993
  • The retention behaviors of polystyrenes influenced by mixed solvents are examined in thermal field-flow fractionation(ThFFF). Experimental data are obtained with polystyrene samples of molecular weights of 35,000, 110,000, 200,000 and 470,000 dissolved in organic solvents. The pure and mixed solvents are tetrahydrofuran(THF), chloroform(CHL), cyclohexane(CH), and benzene(BZ), respectively. The values of retention ratio(R) and thermal diffusion coefficient($D_T$) are measured with change of molecular weight and composition of mixed solvents. Atempts are then made to correlate the measured values with various physicochemical parameters of polymers and solvents. Studies suggest that R is significantly increased with the density of solvent and a good correlation is found between them. $D_T$ values decreases in the mixed solvent having has a higher concentration of poor solvent.

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Experimental Study on the Thermal Mixing and the Critical Heat Flux in the 5${\times}$5 Rod Bundle with the Hybrid Mixing Vane (복합혼합날개를 장착한 5${\times}$5 봉다발에서 부수로 혼합 및 임계열유속 실험 연구)

  • Kang, K.H.;Shin, C.H.;Choo, Y.J.;Youn, Y.J.;Park, J.K.;Moon, S.K.;Chun, S.Y.
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2303-2308
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    • 2007
  • Experiments were performed to determine the thermal (or turbulent) diffusion coefficient (TDC) and to investigate the critical heat flux (CHF) performance in the 5${\times}$5 rod bundle with 5 unheated rods which are supported by Hybrid Mixing Vane. In this study, HFC-134a fluid was used as working fluid and the fluid temperature were measured in the important subchannels. To determine the TDC value, the measured fluid temperatures were compared with the predicted values obtained from the MATRA code. The best optimized value of ${\beta}$ was found to be 0.02 by considering prediction statistics, i.e., average and standard deviations of the differences between the experimental results and code calculations. Using the best optimized value of ${\beta}$ as 0.02, the MATRA code predicts the test results of the fluid temperature within ${\pm}$1.0 % of error. According to the experimental results on CHF of 5 non-heating guide tubes, the case with non-heating guide tube showed a little good performance in terms of CHF.

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An Experimental Study for Characteristics Evaluation of Cement Mortar Using Infrared Thermography Technique (적외선 화상기법을 이용한 시멘트 모르타르 특성의 실험적 평가)

  • Kwon, Seung-Jun;Maria, Q. Feng
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.30 no.1A
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    • pp.53-59
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    • 2010
  • Recently, NDTs (Non-Destructive Techniques) using infrared camera are widely studied for detection of damage and void in RC (reinforced concrete) structures and they are also considered as an effective techniques for maintenance of infrastructures. The temperature on concrete surface depends on material and thermal properties such as specific heat, thermal conductivity, and thermal diffusion coefficient. Different porosity on cement mortar due to different mixture proportions can show different heat behavior in cooling stage. The porosity can affect physical and durability properties like strength and chloride diffusion coefficient as well. In this paper, active thermography which uses flash for heat induction is utilized and thermal characteristics on surface are evaluated. Samples of cement mortar with W/C (water to cement ratio) of 0.55 and 0.65 are prepared and physical properties like porosity, compressive strength, and chloride diffusion coefficient are evaluated. Then infrared thermography technique is carried out in a constant room condition (temperature $20{\sim}22^{\circ}C$ and relative humidity 55-60%). The mortar samples with higher porosity shows higher residual temperature at the cooling stage and also shows reduced critical time which shows constant temperature due to back wall effect. Furthermore, simple equation for critical time of back wall effect is suggested with porosity and experimental constants. These characteristics indicate the applicability of infrared thermography as an NDT for quality assessment of cement based composite like concrete. Physical properties and thermal behavior in cement mortar with different porosity are analyzed in discussed in this paper.

Characteristics of Damage on Photosensor Irradiated by Intense Illumination : Thermal Diffusion Model (고섬광에 노출된 광센서의 손상 특성 : 열확산 모델)

  • Kwon, Chan-Ho;Shin, Myeong-Suk;Hwang, Hyon-Seok;Kim, Hong-Lae;Kim, Seong-Shik;Park, Min-Kyu
    • Journal of the Korea Institute of Military Science and Technology
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    • v.15 no.2
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    • pp.201-207
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    • 2012
  • Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

Permittivity Characteristics of SiO/TiN Thin Film according to Coating Thickness (SiO/TiN 박막의 증착두께에 따른 유전율 특성)

  • 김창석;이우선;정천옥;김병인
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.570-575
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    • 1997
  • In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

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