• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.34-37
• /
• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.137-140
• /
• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• 전자공학회논문지A
• /
• 제30A권7호
• /
• pp.82-88
• /
• 1993

This paper describes fabrication of relative type capacitive pressure sensor to be in great demand for many fields. The fabricated sensor consists of two parts` a sensing diaphragm and a pyrox glass cover. The sensor size is 4.5${\times}3.4mm$^{2})$ and 400$\mu$m thick. To improve the nonlinearity, this sensor is designed a rectangular silicon diaphragm with a center boss structure, and in order to improve the temperature characteristics of the sensor in a packaging process, the sensing element is mounted on the pyrex glass support. Some suggestions toward the design and fabrication of improved sensors have been presented. The zero pressure capacitance, Co of sensor is 26.57pF, and the change of capacitance, ${\Delta}$C is 1.55pF from 0Kgf/Cm$^{2}$ to 1Kgf/Cm$^{2}$ at room temperature. The nonlinearity of the sensor output with center boss diaphragm is 1.29%F.S., and thermal zero shift and thermal sensitivity shift is less than 1.43%F.S./$^{\circ}C$and 0.14% F.S./$^{\circ}C$, respectively.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
• /
• pp.785-787
• /
• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권10호
• /
• pp.451-457
• /
• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• 대한기계학회논문집B
• /
• 제34권2호
• /
• pp.145-151
• /
• 2010

본 연구에서는 지열발전 등과 같은 저온 열원을 에너지원으로 하는 발전에 응용될 수 있는 흡수식 동력 사이클의 출력 최적화를 수행하였다. 이를 위해 정상상태 사이클 시뮬레이션을 수행하여 사이클의 성능을 고찰하였다. 시뮬레이션은 열원과 열침의 입구온도 및 유량을 고정한 상태에서 수행하였으며, 일반적인 발전소의 열원-열침 유량비를 고려하였다. 사이클의 성능은 두 개의 독립변수를 이용하여 나타내었는데, 이는 분리기 입구 암모니아 농도와 터빈 입구 압력이다. 시뮬레이션 결과, $100^{\circ}C$의 지열수와 $20^{\circ}C$의 냉각수(지열수 유량의 5배) 조건에서, 흡수식 동력 사이클을 이용하면 지열수 유량 1 kg/s 당 최대 약 14 kW의 출력을 얻을 수 있음을 보였다.

• 한국전자파학회논문지
• /
• 제14권7호
• /
• pp.705-711
• /
• 2003

본 연구에서는 고출력 소자로서 각광받고 있는 AlGaN/GaN HEMT 2$\times$100 $\mu\textrm{m}$ 소자(사파이어 기판)에 대해 열 효과가 포함된 대신호 모델링을 수행하였다. 완성된 대신호 모델을 이용하여 9 mm, 15 mm 사이즈 소자로의 스케일링을 통해 전력증폭기를 설계하였으며 제작된 결과와 비교, 해석하였다. 대신호 모델링은 수렴성과 해석 속도면에서 탁월한 장점을 갖는 수식 기반의 경험적 방법을 사용하였다. Pulsed I-V 측정을 통하여 열모델의 가장 중요한 파라미터인 열 시상수 및 열 저항을 추출하였으며 이를 통하여 완벽한 열 모델 제작이 가능하였다. 제작된 전력증폭기 모듈의 측정결과와 비교를 통하여 본 연구에서 제안된 열 모델이 매우 정확함을 확인할 수 있으며 전력증폭기와 같이 큰 사이즈의 소자를 사용해야 하는 회로의 경우에는 열 효과가 포함된 모델을 사용하여 더욱 정확한 모델링 결과를 얻을 수 있음을 확인할 수 있다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.246-248
• /
• 1994

The Electrical properties of thin $SiO_2$ film by rapid thermal processing have been investigated and this film has been compared with thermal $SiO_2$ film by furnace. The RTO(rapid thermal oxide) film annealed in Ar ambient represent more superior properties than thermal $SiO_2$ film by furnace at breakdown field and leakage current. The RTO(rapid thermal oxide) film annealed in $NH_3$ ambient represent more inferior properties than thermal $SiO_2$ film by furnace at electrical properties, but the capacitance was improved 15-25% than the conventional oxide film.

• Journal of international Conference on Electrical Machines and Systems
• /
• 제2권4호
• /
• pp.441-446
• /
• 2013

A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.34-37
• /
• 2001

In this study, the capacitance-voltage properties of $(Sr_{1-x}\cdot Ca_x)TiO_3(0.05{\leq}x{\leq}0.20)$-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1480\sim1500^{\circ}C$ and 4 hours. respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, ${\varepsilon}_r$ >50000, tan$\delta$ <0.05, ${\Delta}C$ < ${\pm}10%.$ The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.