• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.223-231
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• 2010

The serious issue of tall building is to ensure the fire-resistance of high strength concrete. The fire resistant finishing method is necessarily essential in order to satisfy the fire resistance time of 3 h required by the law. The fire resistant finishing method is installed by applying a fire resistant material as a method of shotcrete or a fire resistant board to high strength concrete surface. This method can reduce the temperature increase of the reinforcement embedded in high strength concrete at high temperature due to the installation thickness control. This study is interested in identifying the effectiveness of inorganic alumino-silicate compounds including the inorganic admixture such as fly ash and meta-kaolin as the fire resistant finishing materials through the analysis of fire resistance and components properties at high temperature. The study results show that the fire resistant finishing material composed of fly ash and meta-kaolin has the thermal stability of the slight decrease of compressive strength at high temperature. These thermal stability is caused by the ceramic binding capacity induced by alkali activation reaction by the reason of the thermal analysis result not showing the decomposition of calcium hydrate. Inorganic compounds composed of fly ash and meta-kaolin is evaluated to be very effective as the fire resistance material for finishing to protect the concrete substrate by the reason of those simplicity in both application and manufacture. The additional study about the adhesion in the interface with concrete substrate is necessary for the purpose of the practical application.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4491-4498
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• 2022

The thermal stress between W plasma-facing material (PFM) and Cu heat sink in fusion reactors can be significantly reduced by using a W-Cu functionally graded material (W-Cu FGM) interlayer. However, there is still considerable stress at the joining interface between W and W-Cu FGM in the W/W-Cu FGM/Cu portions. In this work, we fabricate W skeletons with continuous gradients in porosity by a modified sedimentation method. Sintering densification behavior and pore characteristics of the sedimented W skeletons at different sintering temperatures were investigated. After Cu infiltration, the final W-Cu FGM was obtained. The results indicate that the pore size and porosity in the W skeleton decrease gradually with the increase of sintering temperature, but the increase of skeleton sintering temperature does not reduce the gradient range of composition distribution of the final prepared W-Cu FGM. And W-Cu FGM with composition distribution from pure W to W-20.5wt.% Cu layer across the section was successfully obtained. The thickness of the pure W layer is about one-fifth of the whole sample thickness. In addition, the prepared W-Cu FGM has a relative density of 94.5 % and thermal conductivity of 185 W/(m·K). The W-Cu FGM prepared in this work may provide a good solution to alleviate the thermal stress between W PFM and Cu heat sink in the fusion reactors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.78-81
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• 1988

Nitroxide films were made from the $NH_3$ gas nitridation of as-grown $SiO_2$. The electrical characterization results including C-V characteristics and BT stress generally indicate that the high field stress instability and insulator-substrate interfacial characteristics are improved by nitridation of $SiO_2$. A C-V technique was used to determine the surface state density $N_{55}$ and then $N_{55}$ in the nitroxide-substrate interface was $8{\times}10(/eVcm^2$). This $N_{55}$ is related with 1/f noise was revealed experimentally and relationship was plotted and 1/f noise characteristics were also improved by nitridation of of $SiO_2$By the results of measurements on these films show that very thin thermal silicon nitroxide films can be used as gate dielectrics for future highly scaled-down VLSI device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• Steel and Composite Structures
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• v.17 no.5
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• pp.601-621
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• 2014

Repairing and strengthening structural members by bonding composite materials have received a considerable attention in recent years. The major problem when using bonded FRP or steel plates to strengthen existing structures is the high interfacial stresses that may be built up near the plate ends which lead to premature failure of the structure. As a result, many researchers have developed several analytical methods to predict the interface performance of bonded repairs under various types of loading. In this paper, a numerical solution using finite - difference method (FDM) is used to calculate the interfacial stress distribution in beams strengthened with FRP plate having a tapered ends under thermal loading. Different thinning profiles are investigated since the later can significantly reduce the stress concentration. In the present theoretical analysis, the adherend shear deformations are taken into account by assuming a parabolic shear stress through the thickness of both beam and bonded plate. The shear correction factor for I-section beams is also included in the solution. Numerical results from the present analysis are presented to demonstrate the advantages of use the tapers in design of strengthened beams.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.65.1-65
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• 2003

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.