• Title/Summary/Keyword: Thermal Compression Bonding

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Properties of High Power Flip Chip LED Package with Bonding Materials (접합 소재에 따른 고출력 플립칩 LED 패키지 특성 연구)

  • Lee, Tae-Young;Kim, Mi-Song;Ko, Eun-Soo;Choi, Jong-Hyun;Jang, Myoung-Gi;Kim, Mok-Soon;Yoo, Sehoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.1
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    • pp.1-6
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    • 2014
  • Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density (저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합)

  • Lee, Chae-Rin;Lee, Jin-Hyeon;Park, Gi-Mun;Yu, Bong-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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Recent Progress of Hybrid Bonding and Packaging Technology for 3D Chip Integration (3D 칩 적층을 위한 하이브리드 본딩의 최근 기술 동향)

  • Chul Hwa Jung;Jae Pil Jung
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.38-47
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    • 2023
  • Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

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Thermo-ompression Process for High Power LEDs (High Power LED 열압착 공정 특성 연구)

  • Han, Jun-Mo;Seo, In-Jae;Ahn, Yoomin;Ko, Youn-Sung;Kim, Tae-Heon
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.4
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    • pp.355-360
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    • 2014
  • Recently, the use of LED is increasing. This paper presents the new package process of thermal compression bonding using metal layered LED chip for the high power LED device. Effective thermal dissipation, which is required in the high power LED device, is achieved by eutectic/flip chip bonding method using metal bond layer on a LED chip. In this study, the process condition for the LED eutectic die bonder system is proposed by using the analysis program, and some experimental results are compared with those obtained using a DST (Die Shear Tester) to illustrate the reliability of the proposed process condition. The cause of bonding failures in the proposed process is also investigated experimentally.

Numerical Analysis of Warpage Induced by Thermo-Compression Bonding Process of Cu Pillar Bump Flip Chip Package (수치해석을 이용한 구리기둥 범프 플립칩 패키지의 열압착 접합 공정 시 발생하는 휨 연구)

  • Kwon, Oh Young;Jung, Hoon Sun;Lee, Jung Hoon;Choa, Sung-Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.41 no.6
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    • pp.443-453
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    • 2017
  • In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

Fluxless Bonding Method between Sn and In Bumps Using Ag Capping Layer (Ag층을 이용한 Sn과 In의 무 플럭스 접합)

  • Lee Seung-Hyun;Kim Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.23-28
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    • 2004
  • We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.

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Preparation of Silk Nonwoven Fabrics by Needle Punching, Thermal Bonding and its properties. (니들펀칭법, 열융착법에 의한 실크 부직포의 제조 및 특성)

  • 이기훈;강경돈;정병희;주창환;남중희
    • Journal of Sericultural and Entomological Science
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    • v.41 no.3
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    • pp.205-210
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    • 1999
  • Silk nonwoven fabrics are prepared by needle punching and thermal bonding with silk waste. To enhance the carding efficiency, the degumming rate was controlled with sodium hydrogen sulfite solution. The amount of the remained sericin was 3%(S-3), and 6%(S-6). Mixing wool and LMP(Low melting polyester) with the silk, to improve carding efficiency, was also effective. Following items were tested with prepared silk nonwovon fabrics : weight, thickness, compression, tensile strength, heat insulation, water absorption, and deodorization. The results show that the silk nonwoven fabrics could be used for apparels and new biomaterials.

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Development of High-strength Polyethylene Terephthalate (PET) Sheet Through Low Melting Point Binder Compounding and Compression Process (저 융점 바인더 복합화 및 압착공정을 통한 고강도 폴리에틸렌 테레프탈레이트(PET) 시트 개발)

  • Moon, Jai Joung;Park, Ok-Kyung;Kim, Nam Hoon
    • Composites Research
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    • v.33 no.5
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    • pp.282-287
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    • 2020
  • In the present study, a high-strength polyethylene terephthalate (PET) sheet was fabricated through a densification process of low melting PET fiber (LMF) combined PET sheet. During the thermal heat treatment process of the combined LMF, individual PET fiber was connected, which in turn leads to the improvement of the interfacial bonding force between the fibers. Also, the densification of the PET sheet leads to reduce macrospore density and in return could enhance the binding force between the overlapped PET networks. Consequently, the asprepared LMF-PET sheet showed about 410% improved tensile strength and the same elongation compared to before compression. Besides, the enhanced bonding force can prevent the shrinkage of the PET fiber network and exhibited excellent dimensional stability.

A 1D model considering the combined effect of strain-rate and temperature for soft soil

  • Zhu, Qi-Yin;Jin, Yin-Fu;Shang, Xiang-Yu;Chen, Tuo
    • Geomechanics and Engineering
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    • v.18 no.2
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    • pp.133-140
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    • 2019
  • Strain-rate and temperature have significant effects on the one-dimensional (1D) compression behavior of soils. This paper focuses on the bonding degradation effect of soil structure on the time and temperature dependent behavior of soft structured clay. The strain-rate and temperature dependency of preconsolidation pressure are investigated in double logarithm plane and a thermal viscoplastic model considering the combined effect of strain-rate and temperature is developed to describe the mechanical behavior of unstructured clay. By incorporating the bonding degradation, the model is extended that can be suitable for structured clay. The extended model is used to simulate CRS (Constant Rate of Strain) tests conducted on structural Berthierville clay with different strain-rates and temperatures. The comparisons between predicted and experimental results show that the extended model can reasonably describe the effect of bonding degradation on the stain-rate and temperature dependent behavior of soft structural clay under 1D condition. Although the model is proposed for 1D analysis, it can be a good base for developing a more general 3D model.

Development of Uniform Press for Wafer Bonder (웨이퍼 본딩 장비용 Uniform Press 개발)

  • Lee, Chang-Woo;Ha, Tae-Ho;Lee, Jae-Hak;Kim, Seung-Man;Kim, Yong-Jin;Kim, Dong-Hoon
    • Transactions of the KSME C: Technology and Education
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    • v.3 no.4
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    • pp.265-271
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    • 2015
  • The bonding process should be achieved in vacuum environment to avoid air bubble. In this study, we studied about pressure uniformity that became an issue in thermo compression bonding usually. Uniform press is realized by the method that use air spring and metal form spring. The concept of uniform press using air spring is removed except pressing direction in the press processing so angle between the vector of pressure surface and the pressure axis is parallel automatically. Air spring compensate the errors of machining and assembly. Metal form compensate the thermal deformation and flatness error.