• 조명전기설비학회논문지
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• 제16권6호
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• pp.126-129
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• 2002

레이저 다이오드의 동작 수명을 예측하고 안정화된 성능과 신뢰도를 만족하기 위해서는 검증된 시스템으로 광부품의 신뢰성 테스트를 수행하는 것이 중요하다. 본 연구에서는 온도와 인가 전류에 따른 접합 온도(junction temperature) 특성을 관찰하여 실제 주위 온도 ( $T_{A}$)와 광소자의 온도( $T_{j}$) 차이를 이론 및 실험 적으로 도출하였고, 이를 토대로 정밀한 burn-in 테스트를 위한 screening 조건을 설정해 제시하였다.하였다.

• Journal of Power Electronics
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• 제10권6호
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• pp.749-761
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• 2010

The switching frequency of a power device is a very important parameter in the design of a parallel active power filter (PAPF), but so far, very little discussion has been conducted on it in a quantitative manner in previous publications. In this paper, an extensive analysis on the effects of the switching frequency on the performance of a PAPF is made, and a specification of the switching frequency values with different compensation results is presented. A first-order inertia element and a second-order oscillation element are considered as approximate models of a PAPF, respectively. The compensation characteristic for each order of harmonic current is obtained at different switching frequencies. Then, the THDs of each model for the system loads of a rectifier with resistance and inductance loads are proposed. The compensation results of a PAPF controlled as a first-order inertia element are better than those of a PAPF controlled as a second-order oscillation element. With two types of system loads which are rectifier with resistance and inductance loads and rectifier with resistance, inductance and capacitance loads, the THDs of the source current after compensation are presented with different switching frequencies. The compensation characteristics for the most widely used digital control system are investigated. The situation with an analog control is the theoretical characteristic and it is the best situation. The compensation characteristic of the digital control is worse than the compensation characteristic of the theoretical characteristic. Based on these analyses, the specifications of compensation characteristics with different switching frequencies are quite straightforward. Finally, a practical design example is studied to verify the application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1611-1613
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• 2000

In this study in order to find out the trends and the residual lifetime for electric connections/contacts using infrared image camera, "lifetime temperature rise model" is theoretically proposed on the base of "lifetime resistance model" and to prove this theory, experiments have been performed for various kinds of electric connections/contacts. Two suggestions have been builded up or the "lifetime temperature rise model" ; one is the linear relationship between the temperature rise $\Delta K$ and contact resistance, and the other is the functional relationship between the temperature of electric connections/contacts and the operating time which ascribed in the "lifetime resistance model". From the experimental results, measured values were quite similar to the theoretical value so that two suggestions in "lifetime temperature rise model" were appeared to be correct.

• 전기학회논문지
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• 제65권10호
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.496-500
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• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.71-72
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• 2008

This paper describes a circuit based simulation model for a Photovoltaic(PV) cell in order to estimate the electrical behavior of the solar cell module with changes of environmental parameters such as shunt resistance, series resistance, temperature and irradiance. An accurate I-V model of PV module is presented based on the Shockley diode model. The general model was implemented on Matlab scrip file, and used irradiance and temperature as variables and outputs of the I-V characteristic. A typical PV module was used for the evaluation, and results was compared with reference taken directly from the manufacturer's published curves leading to excellent agrement with the theoretical prediction.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.471-475
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• 2001

ln this paper, a micromachined micromechanical switch is presented. The presented switch is operated in the vertical direction to the substrate by an electrostatic force between two parallel plates. The moving plate is pulled down to connect the bumps of the bias node$(V_{DD}/ or GND)$ to the bumps of the output node when a oltage difference exists between the moving plate and the input plate. The switch was designed to operate at a low switching voltage$(\risingdotseq5V)$ by including a large-area, narrow-gap, parallel plate capacitor A theoretical analysis of the designed switch was performed in order to determine its geometry fitting the desired pull-in voltage and release voltage. The designed switch was fabricated by surface micromachining combined with Ni electroplating. From the experimental results of the fabricated switch, its pull-in voltage came Out to be less than 5V and the measured maximum allowable current was 150mA. The measured average ON-state resistance was about 8$\Omega$, and the OFF-state resistance was too high to be measured with digital multimeter.

• 전기학회논문지
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• 제65권5호
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• pp.785-793
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• 2016

This paper analyzes an LCL-type isolated dc-dc converter operating for constant output voltage in the continuous conduction mode(CCM) with resistances of parasitic losses-static drain-source on resistance of power switch, ESR of resonant network(L-C-L)-using a high loaded quality factor Q assumptions and fourier series techniques. Simple analytical expressions for performance characteristics are derived under steady-state conditions for designing and understanding the behavior of the proposed converter. The voltage-driven rectifier is analyzed, taking into account the diode threshold voltage and the diode forward resistance. Experimental results measured for a proposed converter at low input voltage and various load resistances show agreement to the theoretical performance predicted by the analysis within maximum 4% error. Especially in the case of low output voltages and large loads, It is been observed that introduction of both rectifier and the parasitic components of converter had considerable effect on the performance.

• Journal of Power Electronics
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• 제16권3호
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• pp.832-839
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• 2016

In this study, the performance of a direct current (DC)-DC buck converter is analyzed in the presence of non-idealities in passive components and semiconductor devices. The effect of these non-idealities on the various design issues of a DC-DC buck converter is studied. An improved expression for duty cycle is developed to compensate the losses that occur because of the non-idealities. The design equations for inductor and capacitor calculation are modified based on this improved expression. The effect of the variation in capacitor equivalent series resistance (ESR) on output voltage ripple (OVR) is analyzed in detail. It is observed that the value of required capacitance increases with ESR. However, beyond a maximum value of ESR (r_c,max), the capacitor is unable to maintain OVR within a specified limit. The expression of r_c,max is derived in terms of specified OVR and inductor current ripple. Finally, these theoretical studies are validated through MATLAB simulation and experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.909-912
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• 2001

Lanthanide orthochromite materials have been widely studied as refractory conducting ceramics because of their electrical conductivity, oxidation resistance and high melting points. In this paper theoretical and experimental analysis about electric conductivity of the SHS prepared ceramics was carried out. The usefulness of the Seebeck-coefficient measurements as a function of P(O$_2$) is emphasized. Electronic conduction was found to be n-type in the lower P(O$_2$) range, and p-type in the higher P(O$_2$) range. The carrier concentrations were calculated as a function of P(O$_2$) and defect structure.