• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.104-109
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• 2019

An analytical threshold voltage model is proposed to analyze the threshold voltage roll-off and drain-induced barrier lowering (DIBL) for a junction-based double-gate (JBDG) MOSFET and a junction-less double-gate (JLDG) MOSFET. We used the series-type potential distribution function derived from the Poisson equation, and observed that it is sufficient to use n=1 due to the drastic decrease in eigenvalues when increasing the n of the series-type potential function. The threshold voltage derived from this threshold voltage model was in good agreement with the result of TCAD simulation. The threshold voltage roll-off of the JBDG MOSFET was about 57% better than that of the JLDG MOSFET for a channel length of 25 nm, channel thickness of 10 nm, and oxide thickness of 2 nm. The DIBL of the JBDG MOSFET was about 12% better than that of the JLDG MOSFET, at a gate metal work-function of 5 eV. It was also found that decreasing the work-function of the gate metal significantly reduces the DIBL.

• Bulletin of the Society of Naval Architects of Korea
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• v.7 no.1
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• pp.13-26
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• 1970

An elastic plate bar jointed to a rigid bar is considered. The bar is subjected to uniform axial tension. A theoretical approximate solution is obtained in an infinite hyperbolic series form and some numerical results for various Poisson's ratios are presented. A rubber plate joined to a strong wooden plate has been tested to obtain an experimental data and the results are compared with theoretical ones. Two values for vertical displacements are in good agreement but it is not satisfactory for horizontal displacements. The conclusion arrived at are as follow : The natures of stress distributions and deformed shapes given by above theoretical solution are compatible in mechanical sense. The magnitudes of stress and displacement components would not be reliable for exact works. A sharp shear stress concentrations are detected at the both ends of the joint.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.2
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• pp.274-281
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• 2019

Objective: The objective of this study was to estimate the risk of Campylobacter jejuni (C. jejuni) infection from various jerky products in Korea. Methods: For the exposure assessment, the prevalence and predictive models of C. jejuni in the jerky and the temperature and time of the distribution and storage were investigated. In addition, the consumption amounts and frequencies of the products were also investigated. The data for C. jejuni for the prevalence, distribution temperature, distribution time, consumption amount, and consumption frequency were fitted with the @RISK fitting program to obtain appropriate probabilistic distributions. Subsequently, the dose-response models for Campylobacter were researched in the literature. Eventually, the distributions, predictive model, and dose-response model were used to make a simulation model with @RISK to estimate the risk of C. jejuni foodborne illness from the intake of jerky. Results: Among 275 jerky samples, there were no C. jejuni positive samples, and thus, the initial contamination level was statistically predicted with the RiskUniform distribution [RiskUniform (-2, 0.48)]. To describe the changes in the C. jejuni cell counts during distribution and storage, the developed predictive models with the Weibull model (primary model) and polynomial model (secondary model) were utilized. The appropriate probabilistic distribution was the BetaGeneral distribution, and it showed that the average jerky consumption was 51.83 g/d with a frequency of 0.61%. The developed simulation model from this data series and the dose-response model (Beta Poisson model) showed that the risk of C. jejuni foodborne illness per day per person from jerky consumption was $1.56{\times}10^{-12}$. Conclusion: This result suggests that the risk of C. jejuni in jerky could be considered low in Korea.

• Bulletin of the Society of Naval Architects of Korea
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• v.8 no.1
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• pp.53-66
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• 1971

The effect of reinforced circular hole in a flat plate under general biaxial loading conditions is considered. The reinforcement is achieved by attaching a circular ring of uniform rectangular cross section along the boundary of the hole. This investigation includes a theoretical solution and an experimental conformation. In the theoretical analysis, Gurney's method is used to obtain a solution for the stress distribution and the solution is expressed in a general form, so that it can be applicable to the case of general biaxial loading and general values of Poisson's ratios. In the experimental work a systematic series of photoelastic models, as shown in Fig.5 and Table 1, were analyzed on polariscope. The experimental results were in good agreement with the theoretical ones, as shown in Fig.8 and 9. The conclusions derived are as follows: 1) The theoretical results, given in Eq. $(1){\sim}(5)$, are sufficient in accuracy for the engineering design purpose. 2) The stress concentration factor decreases as the ratio n increases, but not significant beyond n=3. 3) The stress concentration factor increase as the ratio m increases, but not significant below m=0.7.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.3
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• pp.509-521
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• 1994

This study is an effort to develop computer simulation model that produce precipitation patterns from stochastic model. A stochastic model is formulated for the process of daily precipitation with considering the sequences of wet and dry days and the precipitation amounts on wet days. This study consists of 2 papers and the process of precipitation occurrence is modelled by an alternate renewal process (ARP) in paper (I). In the ARP model for the precipitation occurrence, four discrete distributions, used to fit the wet and dry spells, were as follows; truncated binomial distribution (TBD), truncated Poisson distribution (TPD), truncated negative binomial distribution (TNBD), logarithmic series distribution (LSD). In companion paper (II) the process of occurrence is developed by Markov chain. The amounts of precipitation, given that precipitation has occurred, are described by a Gamma. Pearson Type-III, Extremal Type-III, and 3 parameter Weibull distribution. Daily precipitation series model consists of two models, A-Wand A-G model, by combining the process of precipitation occurrence and a continuous probability distribution on the precipitation of wet days. To evaluate the performance of the simulation model, output from the model was compared with historical data of 7 stations in the Nakdong and Seomjin river basin. The results of paper (1) show that it is possible to design a model for the synthetic generation of IX)int precipitation patterns.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.6
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• pp.2002-2014
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• 1991

A refined two-dimensional analysis method, taking into account the crack opening deformation, is proposed for the evaluation of stress distributions in transverse cracked cross-ply laminates. The interlaminar stresses which play an important role in laminate failure are evaluated using the concept of interface layer. A series expansion of the displacements is employed and the thermal residual stresses and Poisson's effects in the laminated are taken into consideration in the formulation. The stress distributions are compared with finite element results. The proposed method represents well the characteristics of the stress distributions. The through-the-thickness variation of the stress distribution is remarkable near the transverse crack due to the crack opening deformation. The interlaminar stresses have significant values at the transverse crack tip and the proposed analysis can be applied as a basis for the prediction of the induced delamination onset by using appropriate failure criteria.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.34 no.3
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• pp.821-831
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• 2014

Stochastic rainfall generators or stochastic simulation have been widely employed to generate synthetic rainfall sequences which can be used in hydrologic models as inputs. The calibration of Poisson cluster stochastic rainfall generator (e.g. Modified Bartlett-Lewis Rectangular Pulse, MBLRP) is seriously affected by local minima that is usually estimated from the local optimization algorithm. In this regard, global optimization techniques such as particle swarm optimization and shuffled complex evolution algorithm have been proposed to better estimate the parameters. Although the global search algorithm is designed to avoid the local minima, reliable parameter estimation of MBLRP model is not always feasible especially in a limited parameter space. In addition, uncertainty associated with parameters in the MBLRP rainfall generator has not been properly addressed yet. In this sense, this study aims to develop and test a Bayesian model based parameter estimation method for the MBLRP rainfall generator that allow us to derive the posterior distribution of the model parameters. It was found that the HBM based MBLRP model showed better performance in terms of reproducing rainfall statistic and underlying distribution of hourly rainfall series.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1399-1404
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• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.