• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.9
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• pp.1226-1233
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• 2002

The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.211-225
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• 1986

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.404-408
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• 2003

SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.

• Applied Microscopy
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• v.25 no.3
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• pp.33-39
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• 1995

To compare the quality of ultrastructural preservation of Scanning Electron Microscopic specimens dried with different methods; pure air-drying, air-drying with using Tetramethylsilane(TMS), four kind of air-drying using Hexamethyldisilazane(HMDS) and critical point drying(CPD), we conducted scanning electron microscopic observation on liver, skeletal muscle and intestinal tissues from laboratory rat treated with each method. In pure air drying group, severe distortion of tissue surface was observed, and in HMDS treated group, only liver tissue showed slight distortion. But in TMS treated group, each tissue showed a good presentation comparable to CPD group. The results suggest that the method of air-drying using TMS may be the former is less expensive and simple be and also time-saving.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.1 s.232
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• pp.14-21
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• 2005

Laser chemical vapor deposition can be an effective technique for a rapid prototyping with ceramic materials, in particular. The objective of the study is to fabricate several 3-dimensional objects by stacking multi-layers as well as to find out some basic aspects of a rapid prototyping with laser chemical vapor deposition such as deposition characteristics with traversing speed of the laser, possible problems in stacking multi-layers etc. The limit speed of the laser that can grow a tilted SiC rod was found in this study, and laser directing writing that occurs over the limit speed was also investigated. Finally, a zigzag-shaped rod, a spiral-shaped rod, a wall and a square duct were successfully fabricated with laser chemical vapor deposition of tetramethylsilane

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.2
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• pp.83-89
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• 2010

Diamond-like carbon (DLC) coating was studied to be a good tribological problem-solver due to its low friction characteristics and high hardness. However, generally hydrogenated DLC film has shown a weak thermal stability above $300^{\circ}C$. However, the silicon doping DLC process by DC pulse plasma enhanced chemical vapor deposition (PECVD) for the new DLC coating which has a good characterization with thermal stability at high temperature itself has been observed. And we were discussed a process for optimizing silicon content to promote a good thermal stability using various tetramethylsilane (TMS) and methane gas at high-temperature. The chemical compositions of silicon-containing DLC film was analyzed using X-ray photoelectron spectroscopy (XPS) before and after heat treatment. Raman spectrum analysis showed the changed structure on the surface after the high-temperature exposure testing. In particular, the hardness of silicon-containing DLC film showed different values before and after the annealing treatment.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.141-144
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• 1997

High quality 3C-SiC epilayer was grown on Si(111) at 125$0^{\circ}C$ using chemical vapor deposition(CVD) technique by pyrolyzing tetramethylsilane(TMS). 3C-SiC epilayer was doped by tetramethylgallium(TMGa) during the CVD growth. The crystallinity of 3C-SiC was significantly enhanced by doping the gallium impurity.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.386-388
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• 1995

The polymerization rate, chemical structure and optical properties of tetramethyldisiloxane(TMS) have been investigated. The rate of polymerization of TMS films increased nonlinearly with the discharge power. The refractive indices of thin films varied from 1.40 to 1.43 and they also increased with increasing discharge power. Also, the extinction coefficient was about 0.2 and is independent of photon energy.

• YAKHAK HOEJI
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• v.33 no.3
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• pp.203-205
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• 1989

A method is presented for calculating the $^{13}C$ chemical shifts produced in liquid solution by referenced relative to RF frequency. The method is useful to get the real variations of chemical shifts in magnetic field by eliminating the affects of the variation of a reference substance.