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http://dx.doi.org/10.3795/KSME-B.2002.26.9.1226

Study of Laser Chemical Vapor Deposition of Silicon Carbide from Tetramethylsilane  

Lee, Yeong-Rim
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.26, no.9, 2002 , pp. 1226-1233 More about this Journal
Abstract
The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.
Keywords
Laser Chemical Vapor Deposition; Tetramethylsilane; Silicon Carbide;
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Times Cited By KSCI : 2  (Citation Analysis)
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