• Journal of the Korean Applied Science and Technology
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• v.28 no.2
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• pp.178-184
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• 2011

The analysis of reaction kinetics provided that the reaction order was the $1^{st}$ of triglyceride and the rate constant was 0.067 $min^{-1}$. The transesterification of camelina oil using 0.6 wt% mixed catalyst which consists of 40 v/v% of potassium hydroxide (1 wt%) and 60 v/v% of tetra methyl ammonium hydroxide (0.8 wt%), was carried out at $65^{\circ}C$ on the tubular reactor packed with static mixer. The conversion was shown to be 95.5% at the 6:1 molar ratio of methanol to oil, flow rate of feed of 3.0 mL/min and 24 of element of static mixer. The volume of washing water emitted by 0.6 wt% mixed catalyst was the half of the volume emitted by 1 wt% potassium hydroxide.

• Advances in materials Research
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• v.2 no.2
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• pp.99-109
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• 2013

In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

• New & Renewable Energy
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• v.5 no.1
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• pp.26-31
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• 2009

The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.19-24
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• 2005

In this paper, the fabrication process of Si pressure sensors utilizing piezoresistive effect was optimized. The efficiency(yield) of the fabrication process for Si piezoresistive pressure sensors was improved by conducting Si anisotrophic etching process after processes of piezoresistors and AI circuit patterns. The position and process parameters for piezoresistors were determined by ANSYS and SUPREM simulators, respectively. The measured thickness of p-type Si piezoresistors from the boron depth-profile measurement was in good agreement with the simulated one from SUPREM simulation. The Si anisotrohic etching process for diaphragm was optimized by adding ammonium persulfate(AP) to tetramethyl ammonium hydroxide (TMAH) solution.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.10-14
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• 2021

Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.678-682
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• 2005

We studied the possibility of $Zn_4O(Ac)_2(OH)$ formation as a precursor for ZnO nano particles in sol-gel method. Four different additives such as tetra methyl ammonium hydroxide, mono ethanol amine (MEA), LiOH, and $H_2O$ were used for zinc acetate dissolved in 2-methoxy ethanol. ZnO particles of 5-6 nm in size were observed. Existence of $Zn_4O(Ac)_6$ was not verified. $Zn_4O(Ac)_2(OH)$ molecules were observed and they were believed to be the precursors of ZnO. A peak at 275nm in UV-Vis analysis was observed In the case of MEA and $H_2O$ but no ZnO particles were detected in transmission electron microscopy.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.35-40
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• 2008

Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

• Air Cleaning Technology
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• v.17 no.4 s.67
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• pp.39-57
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• 2004

첨단산업으로 불리는 반도체, LCD, PDP, 유기EL(OLED) 등의 생산 공정은 고도의 청정상태를 요구하며, 때문에 이들의 생산공정 중 대부분이 클린룸 내에서 이루어진다. 클린룸 내에서의 주요공정은 크게 박막형성(Layering), 노광(Photo Lithography), 식각(Etching) 등 3가지 공정으로 나눌 수 있으며, 반도체 제조공정의 경우 특별히 도핑(Doping) 공정이 추가된다. 오염물질을 함유하는 클린룸 배기는 일반적으로 산, 알칼리, Toxic(PFCs, Flammable), VOC 등으로 분류하며, 각각의 배기는 각 배기특성에 맞는 오염제어 장치를 통해, 정화된 후, 대기로 방출된다. 산, 알칼리 배기는 일반적으로 최종 단계에서 중앙집중식 습식스크러버에 의해 흡수, 중화 처리되며, VOC의 경우 농축기(Concentrator) & 축열식 열 산화장치(RTO) 설비에 의해 연소 처리된다. 하지만 CVD공정으로부터의 배기가 주를 이루는 Toxic배기의 경우, 다량의 PFCs(과불소화합물) 가스를 함유하고 있는 이유로, 대부분 클린룸 내부에 P.O.U(Point of use) 처리장치가 설치되며, P.O.U에 의해 1차 처리된 후 최종적으로 중앙집중식 습식스크러버를 거쳐 대기로 방출된다. 알칼리배기의 주성분으로는 암모니아($NH_3$), HMDS (Hexa Methyl DiSilazane), TMAH (Tetra Methyl Ammonium Hydroxide), LGL, CD 등이며 흡수액에 황산(Sulfuric Acid)용액을 공급, 중화처리하고 있다. 탄소성분을 먹이로 하는 미생물의 번식에 의한 막힘 문제를 제외하고는 큰 문제가 없다. 하지만 Toxic배기 및 산배기의 경우 처리효율이, 가스흡수 이론에 의한 계산결과와 비교할 때, 매우 저조하게 나타나는 효율부족 현상을 겪고 있으며, 이는 잔여 PFCs 가스성분 및 반응에어로졸, 응축에어로졸 등의 영향으로 추정하고 있다. 최근 Toxic 배기의 경우, P.O.U 설비를 Burn & Wet type으로 변경하여, 배기 중 PFCs 및 반응에 에어로졸($SiO_2$)의 농도를 원천적으로 감소시키는 노력이 진행 중이다. 산배기의 경우, 산결로 현상에 의한, 응축에어로졸이 문제가 되고 있으나 내식열교환기(Anti-Corrosive Heat Exchanger), 하전액적스크러버 시스템(Charged Droplets Scrubber System), Wet ESP(Wet Electrostatic Procipitator) 등의 도입을 통해 문제해결을 위한 노력을 경주하고 있다.