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Optimization on the fabrication process of Si pressure sensors utilizing piezoresistive effect  

Yun Eui-Jung (Dept. of Information and Control Eng., Hoseo University)
Kim Jwayeon (Dept. of Materials Eng., Hoseo University)
Lee Seok-Tae (Dept. of Information and Control Eng., Hoseo University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.1, 2005 , pp. 19-24 More about this Journal
Abstract
In this paper, the fabrication process of Si pressure sensors utilizing piezoresistive effect was optimized. The efficiency(yield) of the fabrication process for Si piezoresistive pressure sensors was improved by conducting Si anisotrophic etching process after processes of piezoresistors and AI circuit patterns. The position and process parameters for piezoresistors were determined by ANSYS and SUPREM simulators, respectively. The measured thickness of p-type Si piezoresistors from the boron depth-profile measurement was in good agreement with the simulated one from SUPREM simulation. The Si anisotrohic etching process for diaphragm was optimized by adding ammonium persulfate(AP) to tetramethyl ammonium hydroxide (TMAH) solution.
Keywords
Piezoresistive; Pressure Sensor; TMAH; AP;
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Times Cited By KSCI : 1  (Citation Analysis)
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