• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.239-247
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• 2009

In AC-PDP, it is necessary to achieve high luminance efficacy, high luminance and high resolution by adopting technologies such as high Xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they reduce driving voltage margin. For example, doping of MgO reduces driving voltage but introduces new problems such as increased temperature dependency of discharge, which result in larger variations in driving margin at different temperatures. In this paper, we present the experimental results of the characteristics of temperature-dependent discharges. In addition, we suggest the mechanism of bright noise, black noise, and high temperature mis-discharge, which depend on temperature-dependent characteristics of MgO.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.566-571
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• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.214-221
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• 2019

In this paper, a temperature dependent acoustic receiving characteristics of underwater acoustic sensor is studied by theoretical and experimental investigations. Two different types (low mid frequency sensor and high frequency sensor) of underwater acoustic sensors are designed with different configuration of baffle and conditioning plate. The temperature dependent characteristics of the acoustic sensors are investigated within the temperature range from $-2^{\circ}C$ to $35^{\circ}C$. The material properties of the piezoelectric ceramics, molding and baffle, which are the primary materials of the acoustic sensors, are measured with temperature change. The temperature dependent RVS (Receiving Voltage Sensitivity) characteristics of the acoustic sensors are simulated by using the measured material properties. The RVS changes of the acoustic sensors are measured by changing temperature in the watertank where the acoustic sensors are installed. The measured and the simulated data show that the temperature dependent characteristics of the acoustic sensors are mainly dependent for the sound speed changes of the molding material.

• Journal of Mechanical Science and Technology
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• v.20 no.3
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• pp.382-390
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• 2006

The present study proposes a modified temperature-dependent non-Newtonian viscosity model and investigates the flow characteristics and heat transfer enhancement of the viscoelastic non-Newtonian fluid in a 2:1 rectangular duct. The combined effects of temperature dependent viscosity, buoyancy, and secondary flow caused by the second normal stress difference are considered. Calculated Nusselt numbers by the modified temperature-dependent viscosity model give good agreement with the experimental results. The heat transfer enhancement of viscoelastic fluid in a rectangular duct is highly dependent on the secondary flow caused by the magnitude of second normal stress difference.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.577-582
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• 2007

The plasma display panel is an image expression display using gas discharge plasma. However, gas discharge characteristics vary with temperature as gas discharge is sensitive to temperature. The discharge time lag extends a lot in low temperature and it is known as the cause which hinders high speed addressing which is essential for the size enlargement of the panel. Accordingly this research aims at identifying the temperature-dependent discharge characteristic. The lower temperature becomes, the longer addressing discharge time lag becomes. Particularly the statistical time lag extends much in low temperature. The increasing of electric field shortens discharge time lag in low temperature. Also, when priming particles are sufficiently supplied, stable discharge can be performed regardless of the influence of temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.