• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.693-695
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• 2003

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 동작 온도에 따른 전류-전압 특성을 조사하였다. main gate와 side gate 길이는 각각 50nm, 70nm로 하였으며, main gate와 side gate 전압이 각각 1.5V, 3.0V일 때 온도 변화에 따른 전류-전압 특성을 조사하였다. 실온에서보다 77K일 때가 전류-전압 특성이 우수하였으며, 이때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.239-247
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• 2009

In AC-PDP, it is necessary to achieve high luminance efficacy, high luminance and high resolution by adopting technologies such as high Xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they reduce driving voltage margin. For example, doping of MgO reduces driving voltage but introduces new problems such as increased temperature dependency of discharge, which result in larger variations in driving margin at different temperatures. In this paper, we present the experimental results of the characteristics of temperature-dependent discharges. In addition, we suggest the mechanism of bright noise, black noise, and high temperature mis-discharge, which depend on temperature-dependent characteristics of MgO.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.566-571
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• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• 한국음향학회지
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• 제38권2호
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• pp.214-221
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• 2019

본 논문은 수중음향센서의 수온 변화에 따른 음향 수신 특성 변화를 이론적, 실험적 방법으로 확인하였다. 반사판 및 배플 구성에 따라 중 저주파용 및 고주파용의 두 가지 음향센서를 설계하여 $-2^{\circ}C{\sim}35^{\circ}C$의 온도범위에서 온도 변화에 따른 음향 수신 특성을 각각 분석하였다. 음향센서 주요 구성 소재의 온도별 물성치 변화에 대한 영향성을 분석하기 위하여 압전세라믹, 몰딩 및 배플 시편의 온도별 물성치 변화를 측정하였고, 측정된 물성치를 활용하여 온도별 수신감도(Receiving Voltage Sensitivity, RVS) 변화를 유한요소해석 기법을 통하여 해석하였다. 제작된 두 가지 음향센서의 온도별 수신감도 특성을 측정하기 위하여, 내부 수온 및 수압 조정이 가능한 압력 챔버에 음향센서를 설치하고 챔버 내부 수온을 변화시켜가며 수신감도를 측정하였다. 측정 및 분석결과 수중센서의 온도별 수신감도 특성은 몰딩 재료의 음속변화에 주도적으로 영향을 받는 것을 확인하였다.

• Journal of Mechanical Science and Technology
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• 제20권3호
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• pp.382-390
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• 2006

The present study proposes a modified temperature-dependent non-Newtonian viscosity model and investigates the flow characteristics and heat transfer enhancement of the viscoelastic non-Newtonian fluid in a 2:1 rectangular duct. The combined effects of temperature dependent viscosity, buoyancy, and secondary flow caused by the second normal stress difference are considered. Calculated Nusselt numbers by the modified temperature-dependent viscosity model give good agreement with the experimental results. The heat transfer enhancement of viscoelastic fluid in a rectangular duct is highly dependent on the secondary flow caused by the magnitude of second normal stress difference.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• 전기학회논문지
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• 제56권3호
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• pp.577-582
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• 2007

The plasma display panel is an image expression display using gas discharge plasma. However, gas discharge characteristics vary with temperature as gas discharge is sensitive to temperature. The discharge time lag extends a lot in low temperature and it is known as the cause which hinders high speed addressing which is essential for the size enlargement of the panel. Accordingly this research aims at identifying the temperature-dependent discharge characteristic. The lower temperature becomes, the longer addressing discharge time lag becomes. Particularly the statistical time lag extends much in low temperature. The increasing of electric field shortens discharge time lag in low temperature. Also, when priming particles are sufficiently supplied, stable discharge can be performed regardless of the influence of temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.