• 전기학회논문지P
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• 제58권4호
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• pp.538-540
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• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• 한국결정성장학회지
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• 제6권2호
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• pp.155-165
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• 1996

Growth of $LiNbO_3$ single crystal by Czochralski method was carried out to study the piezoelectric effects. Piezoelectric coefficients and elastic compliances of the $LiNbO_3$ single crystal were determined by the resonance method of length-extentional mode of bar resonator from the room temperature up to $100^{\circ}C$. Two dielectric constants of $LiNbO_3$ were also determined by measuring the capacitance of the plate specimen. Measured constants were piezoelectric coefficients $d_{15},d_{22},d_{31},d_{33}$ elastic compliances $s^E_{11},s^E_{33},2s^E_{13}+2s^E_{44},s^E_{14}$ and dielectric constants $K^T_{11},K^T_{33}$. As temperature increased, elastic compliances changed very slowly while piezoelectric coeffiecients and dielectric constant $K^T_{33}$ changed very rapidly. Electromechanical coupling constant of zyw ($45^{\circ}C$)-bar was as high as 0.51 in room temperature and nearly constant up to $1000^{\circ}C$. The increase of piezoelectric coefficients was mainly due to the increase of dielectric permittivity.

• 전기학회논문지
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• 제57권7호
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• pp.1213-1217
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• 2008

Poling is an important process in fabricating PZT ceramic devices such as filters and resonators and activates piezoelectricity to sintered PZT ceramics. Tolerance of the operating frequency of these devices is tightly required in applications. And a factor to attribute the tolerance is the temperature dependence of the resonance frequency of PZT ceramics. In this paper the relationship of poling strength and temperature dependence of resonance frequency of PZT specimens was studied. The $Pb(Zr_{0.53}Ti_{0.47})O_3$ ceramics were fabricated and the poling strengths were chosen to be 0.5, 1.5, 2.5 and 3.5 [kV/mm]. The dielectric constant of the specimen poled in poling strength 0.5 [kV/mm] was less than that of unpoled specimen and the specimen poled in higher electric field had the higher dielectric constant. (002) peak in X-ray diffraction patterns of the specimens increased as poling strength increased. And the change of resonance frequency of the specimens according to the variation of temperature was measured. Resonance frequency of all specimens increased as the temperature increased. The specimen poled in higher electric field had the smaller positive temperature coefficient of resonance frequency. The effect that temperature coefficient of resonance frequency becomes smaller is obtained when Zr mole in PZT composition equation increase. Controlling the poling strength is believed to be a method to adjust the temperature stability of resonance frequency of the PZT ceramic devices.

• 전기학회논문지
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• 제59권6호
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• pp.1083-1086
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• 2010

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$ thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800$[^{\circ}C$]. The surface rougness showed about 0.42[nm] in annealed thin film at $650[^{\circ}C$]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above $700[^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~＋10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at $750[^{\circ}C$] showed a fatigue-free characteristics up to $1.0\times10^8$ cycles.

• 한국재료학회지
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• 제13권12호
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• 한국결정성장학회지
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• 제10권2호
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• pp.134-139
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• 2000

40PMN-30PT-30PMW의 조성을 갖는 유전체를 제조함에 있어, 유전율의 감소를 줄이고 유전율의 온도의존성을 향상시키기 위하여, PMN-PT를 먼저 합성한 다음, PbO와 $WO_3$ 화합물인 $PbWO_4$와 반응시켜 소결체를 얻는 방법을 사용하였다. 유전율은 소결체의 밀도에 크게 영향을 받고 있으며, $950^{\circ}C$ 이상에서는 소결온도가 증가함에 따라 PbO의 휘발에 의하여 밀도와 유전율이 감소하였다. 상온에서의 최대 유전율은 $950^{\circ}C$에서 고결한 경우 약 24,000을 나타냈으며, 이때의 유전손실을 3%이었다. 유전율의 온도에 따른 변화율은 소결온도가 증가함에 따라 $1000^{\circ}C$ 이상에서는 구 대의 상전이 온도를 나타내며 감소하였다. 온도에 따른 유전율의 변화율은 $1150^{\circ}C$에서 소결한 시편의 경우 $-55^{\circ}C{\sim}125^{\circ}C$ 범위에서 -37~0%로 가장 우수한 값을 나타냈으며, 유전율은 상온에서 9,900이었다.

• 한국재료학회지
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• 제11권1호
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• pp.44-47
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• 2001

Ni 전극을 사용하는 $BaTiO_3$계 내환원성 X7R 조성에서 $Er_2$$O_3$ 첨가가 유전특성에 미치는 영향에 대하여 환원성 분위기에서 연구하였다. $MnO_2-MgO$가 첨가된 내환원조성에서 첨가량이 조절된 $Er_2O_3$의 복합첨가로 유전율의 온도안정성이 향상되어 X7R 규격을 만족시켰으며 2,970 이상의 상온 유전상수와 1.0% 이하의 유전손실율이 관찰되었다. $Er_2O_3$가 3.0 mol% 이상으로 과량 첨가되었을 경우 유전체의 온도특성은 향상되었으나 상온 유전상수가 현저히 감소하였다. 다른 첨가조성(1.5 mol% $Er_2O_3$2.0 mol% MgO)이 고정될 때 TCC곡선은 $MnO_2$첨가량이 증가함에 따라 시계방향으로 회전하였으며, 온도안정성을 향상시켰다.

• 한국세라믹학회지
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• 제53권2호
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• pp.139-144
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• 2016

The dependence of the microwave dielectric properties of the glass-ceramic composite $0.9CaMgSi_2O_6-0.1MgSiO_3$ on the crystallization behaviour was investigated as functions of the $TiO_2$ content and heat-treatment temperature. The crystallization behaviour of the specimens was evaluated via a combination of the Rietveld and reference-intensity ratio methods. For specimens with a $TiO_2$ content of up to 1 wt.%, a monoclinic diopside phase was formed, whereas a secondary $TiO_2$ phase was formed with further increases in the $TiO_2$ content. The quality factor (Qf) of the specimens was strongly dependent on the degree of crystallization. The highest Qf value was obtained with a $TiO_2$ content of 0.5 wt.%, which was improved by increasing the heat-treatment temperature. The dielectric constant (K) was affected by the size of the crystallites and the $TiO_2$ content. The temperature coefficient of the resonant frequency (TCF) was nearly constant for all of the specimens, regardless of the $TiO_2$ content or heattreatment temperature.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.289-290
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• 2006

[ $SrTiO_3$ ] is usually added as shifters in order to move the $T_C$ of $BaTiO_3$ to lower temperatures because it is well established that the $T_C$ of $BaTiO_3$ decreases linearly with a solid solution of $Sr^{+2}$ in place of $Ba^{+2}$. It is not fully understood yet, however, how $SrTiO_3$ influences on the peak value of the dielectric constant $(\varepsilon_{max})$ at the $T_C$ of $BaTiO_3$. This research reports the effect of $SrTiO_3$ addition on εmax at the $T_C$ of $BaTiO_3$ ceramics. Based on the chemical composition and the grain size dependence of the dielectric property of $BaTiO_3$ ceramics, functionally graded $(Ba,Sr)TiO_3$ composites were designed and fabricated. Multi-layered $(Ba,Sr)TiO_3$ composites with a compositional gradient of $SrTiO_3$ exhibited a low temperature coefficient and high dielectric constant in a wide temperature range.

• 한국안광학회지
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• 제6권1호
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• pp.111-117
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• 2001

BB-계열에서 $Bi_2O_3$ 함량이 증가할수록 비저항의 peak는 낮은 온도로 이동하였다. 비저항에 대한 완화현상을 설명하기 위한 등가회로는 G-C의 병열회로이고, 전기전도과정은 체적전도이며, 완화의 형태는 non-Debye 형이었다. 그리고 BB-계열의 전기전도 현상은 일반적으로 s가 거의 일정한 (s=0.8) QMT 모델에 잘 맞는 것으로 판명되었다.