Browse > Article
http://dx.doi.org/10.5370/KIEE.2010.59.6.1083

Electrical Properties with Annealing Temperature of SBN Thin Film  

Kim, Jin-Sa (조선이공대학 메카트로닉스과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.59, no.6, 2010 , pp. 1083-1086 More about this Journal
Abstract
The $Sr_{0.7}Bi_{2.3}Nb_2O_9$ thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800$[^{\circ}C$]. The surface rougness showed about 0.42[nm] in annealed thin film at $650[^{\circ}C$]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above $700[^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~＋10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at $750[^{\circ}C$] showed a fatigue-free characteristics up to $1.0\times10^8$ cycles.
Keywords
Sputtering; Rougness; Dielectric loss; Fatigue;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
Times Cited By SCOPUS : 2
연도 인용수 순위
1 Jin-Sa Kim, Woon-Shik Choi and Chung-Hyeok Kim "Microstructure and Properties of SBN Thin Film with Deposition Temperature", Trans. KIEE, Vol. 58, No. 3 pp.544-546, 2009.
2 Seung-Chang Shin, Moon-Kee Lee, Jang-Ho Chung et al, "Electric Properties of BST Thin with $Ar/O_2$ ratio", J. of KIEEME, Vol. 12, No. 5 pp.437-439, 1999.
3 C. S. Hwang et al., "Interface potential barrier height and leakage current behavior of Pt/(Ba,Sr) $TiO_3/Pt$ capacitor fabricated by sputtering process", Integrated Ferroelectrics. Vol. 13, pp.157-160, 1996   DOI   ScienceOn
4 Keisuke Saito, Masatoshi Mitsuya, Norimasa Nukaga, Isao Yamaji, Takao Akai and Hiroshi Funakubo, "Method of Distinguishing $SrBi_2Ta_2O_9$ Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping", Jpn.J.Appl.Phys. Vol.39 Pt.1, No.9B, pp5489-5495, 2000.   DOI
5 C Bedoya, Ch Muller, F Jacob, Y Gagou, M-A Fremy and E Elkaim "Magnetic-field-induced orientation in Co-doped $SrBi_2Ta_2O_9$ ferroelectric oxide" J. Phys.: Condens. Matter 14, No.45 pp.11849-11857, 2002.   DOI   ScienceOn
6 Jin-Sa Kim and Chung-Hyeok Kim "Surface Morphology and Dielectric Properties of SBN Thin Film by RF Sputtering Method", J. of KIEEME, Vol. 22, No. 8 pp.671-672, 2009.
7 T. K. Song, J. K. Lee and H. J. Jung, "Structural and ferroelectric properties of the c-axis oriented $SrBi_2Ta_2O_9$ thin films deposited by the radiofrequency magnetron sputtering", Appl. Phys. Lett., Vol. 69, pp.3839-3841, 1996   DOI   ScienceOn
8 Jin-Sa Kim "Properties of Annealing Temperature of Ceramic Thin Film by RF Sputtering Method"Trans. KIEE, Vol. 58p, No. 4 pp.538-540, 2009.
9 E. N. Bunting, G. R. Shelton and A. S. Creamer, "Properties of Barium-Strontium Titanate Dielectric," J. Am. Cerm. Soc., Vol.30(4), pp.114-25, 1947   DOI
10 Jae-Hyung Lee, Jung-Hyuk Koh, Sang-Mo Koo, Byung-Moo Moon, "Fabrication and Characteristics of Ferroelectric $SBT/YBCO/LaAlO_3$ Hetero Thin Films by the PLD Method", J. of KIEEME, Vol. 12, No. 2 pp.167-168, 1999.
11 K. Fujimoto, Y. Kobaashi, and K. Kubata, "Growth of $BaTiO_3-SrTiO_3$ Thin films by RF Magnetron Sputtering", Thin Solid Films, Vol.169, pp.249-256, 1989.   DOI   ScienceOn