The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical Properties with Annealing Temperature of SBN Thin Film

SBN 박막의 열처리온도에 따른 전기적인 특성

  • 김진사 (조선이공대학 메카트로닉스과)
  • Received : 2010.05.10
  • Accepted : 2010.05.17
  • Published : 2010.06.01
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Abstract

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$ thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800$[^{\circ}C$]. The surface rougness showed about 0.42[nm] in annealed thin film at $650[^{\circ}C$]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above $700[^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~＋10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at $750[^{\circ}C$] showed a fatigue-free characteristics up to $1.0\times10^8$ cycles.

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References

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