한국재료학회지 (Korean Journal of Materials Research)

  • 제13권12호
  • /
  • Pages.801-805
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  • 2003
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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MOCVD법과 MOD법으로 제작된 Ta2O5 박막의 열처리 온도에 따른 유전특성연구

Dielectric Properties of Ta2O5 Films Annealed at Various Temperature by MOCVD and MOD

  • 강필규 (고려대학교 재료공학과) ;
  • 진정근 (고려대학교 재료공학과) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 배재준 (고려대학교 재료공학과) ;
  • 남산 (고려대학교 재료공학과)
  • Kang, Pil-Kyu (Department of Materials Science & Engineering, Korea University) ;
  • Jhin, Jung-geun (Department of Materials Science & Engineering, Korea University) ;
  • Byun, Dong-jin (Department of Materials Science & Engineering, Korea University) ;
  • Bae, Jae-jun (Department of Materials Science & Engineering, Korea University) ;
  • Nahm, Sahn (Department of Materials Science & Engineering, Korea University)
  • 발행 : 2003.12.01
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초록

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

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