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Properties of Annealing Temperature of Ceramic Thin Film by RF Sputtering Method  

Kim, Jin-Sa (조선이공대학 메카트로닉스과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers P / v.58, no.4, 2009 , pp. 538-540 More about this Journal
Abstract
The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].
Keywords
Thin Film; Annealing; Dielectric Constant; Capacitance;
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Times Cited By KSCI : 3  (Citation Analysis)
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