• 전기의세계
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• 제16권4호
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• pp.11-16
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• 1967

A physical analysis is applied to the measured phenomena of aromatic organic compounds under the uniform electric field of 0.1MV/cm through 1.5MV/cm, when they are irradiated or non-irradiated respectively. Upon the observations about irradiation effects, space charge effects and their temperature dependance, the conditions of lattice defects act conspicuously on electric conductrivity, photo conductivity and dielectric breakdown. Although the qualitative agreement with Frohlich's high energy criterion theory for the above mechanisms is poor, it is concluded that the phenomena of aromatic compounds may possibly be due to the effect of lattice defects or impurity centers generated by .gamma.-ray irradiations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.401-404
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• 1998

Recently, InGaP/GaAs HBTs have been much interested as a potential replacement for AlGaAs/GaAs HBTs because of their superior device and material properties. In this paper, DC characteristics of InGaP/GaAs HBTs and the temperature dependance as well as the reliability were investigated comparing with AlGaAs/GaAs HBTs. As a results InGaP/GaAs HBTs produced the superior performance to AlGaAs/GaAs HBTs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.431-433
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• 2000

In this paper, we evaluated the dielectric properties and thermal analysis on sliced XLPE sheet from 154kV power cable and compared with 22kV XLPE sheet. As the result, dielectric constant was not applied voltage dependance but trended to increase with temperature. Test result presented that tan$\delta$ of XLPE with Interface was trend to increased.

• 한국재료학회지
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• 제4권1호
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• pp.113-116
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• 1994

이 논문은 glass기판에 Insb를 진공증착시킨 Insb박막 자기 sensor에 대하여 연구한 것으로 Hall 효과를 이용하여 자계 및 온도에 대한 Hall전압의 의존성을 조사하엿다. 일정전류구동에서 자계데 대한 Hall전압의 변화는 거의 직선적이었으나 정전압구동에서는 직선성에서 벗어나는 것을 보였다. 주위 온도가 증가함에 따라 Hall 전압이 감소하였으며 InSb 증착막을 자기 sensor로 사용하는 경우, 온도 특성을 고려할 필요가 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.368-368
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• 2010

Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from $-40^{\circ}C$ to $100^{\circ}C$. Basic curve, $V_G-I_D$, is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since $V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.84-87
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• 2001

In this paper, degradation and dielectric properties of XLPE sheets moved from 22/154kV power cables were investigated. At the results of dielectric property of 22kV/154kV XLPE sheet, We earned that $tan{\delta}$ is $7.4{\times}10^{-4}$, $2.15{\times}10^{-4}$ and dielectric constant is 2.3, 2.24. Temperature dependance of $tan{\delta}$ inclined to increasing with temperature and increase of $tan{\delta}$ of 22kV XLPE sheet is higher than it of 154kV XLPE sheet. And increasement of XLPE sheet with water is higher than it without water.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.605-608
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• 2001

With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of 20∼100[$^{\circ}C$], we are made researches AC breakdown in the gap of 500∼2,500[$\mu\textrm{m}$]. The classification for the physical properties of oil for oil-immersed transformer by FTH and $^1$H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.

• 대한의용생체공학회:의공학회지
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• 제10권2호
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• pp.165-172
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• 1989

본 논문에서는 초음파 반사신호에 내포되어 있는 정량적인 정보로부터 감쇠계수, 전파속도 파라메타를 매개로 조직의 온도특성에 대해 검토하고 이를 기초로 무침습적인 심부 온도추정의 가능성에 대해서 고찰하였다. 실험에 사용한 기초시료는 아크릴과 돼지의 근육, 간, 지방이며 온도분해능이 $0.25^{\circ}C$이하로 조절되는 항은수조를 제작하여 시료의 온도를 변화시켰다. 일련의 실험을 통하여 조직의 온도변화에 따른 초음파 파라메타의 변화가 근시적 선형성을 가짐이 확인되었으며 이는 표준적인 실험조건과 기준치의 설정을 전제로 무침습적 심부 온도추정이 가능함을 시사하는 것이다.

• 한국자기학회지
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• 제14권1호
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• pp.1-6
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• 2004

비접촉 온도측정 시스템을 구현하기 위하여 감온페라이트를 이용하여 제작한 인던턴스소자와 캐피시터를 접속하여 LC공진형 센서를 구성하고, 비접촉 온도계측성능에 대하여 조사하였고, 송수신기 사이의 거리에 대한 측정감도에 대하여 검토하였다. 감온 페라이트가 가지는 투자율의 온도의존성에 의해서 제작한 센서의 인덕턴스와 공진주파수가 변화함을 알 수 있었고, 공진주파수의 변화를 비접촉으로 검출함으로써 비접촉으로 온도를 검출할 수 있음을 알 수 있었다. 또한 비접촉 측정 감도는 송 $.$수신기 사이 거리의 6승에 비례하는 감소하는 것을 알 수 있었다.