• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.7
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• pp.86-94
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• 1998

The rosette-scan seeker is a device mounted on the infrared guided missile. It offers the positions and iamges of target to missiles servo system by scanning a space about target in rosette pattern with a single detector. An instantaneous field of view (IFOV), which is a diameter of a detector moving along the path of the rosette pattern, has the property that its smaller size provide the less interference of background signals and detector noise. If its size is too small to voer the total field of view (TFOV), however, it produces the invisible regions in the TFOV. In this case, the invisible regions cause the performance of the seeker to deteriorate. For full scan-coverage, it is necessary to design the small IFOV without the invisible regions in the TFOV, as possible. In this paper, we propose the new method of designing the smaller IFOV than the conventional method and verify full coverage of the scanned region. By comparing the nose equivalent flux density (NEFD) of the proposed method with the that of the conventional one, we confirm that the former is better than the latter in terms of performance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.38-48
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• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.48-52
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• 1998

We fabricated the newly proposed nano structure memory with SOI edge channel and a nano dot. The width of the edge channel of this device, which uses the side wall as a channel and has a nano dot on this channel region, was determined by the thickness of the recessed top-silicon layer of SOI wafer. The size of side-wall nano dot was determined by the RIE etch and E-Beam lithography. The I$_{d}$-V$_{d}$, I$_{d}$-V$_{g}$ characteristics of the devices without nano dots and memory characteristics of the devices with nano dots were obtained, where the voltage scan was done between -20 V and 14 V and the threshold voltage shift was about 1 V.t 1 V.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.3
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• pp.1-7
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• 1975

In this paper, a method of writing and reproducing high density data with ordinary Audio cassette deck is discribed. In writing, the data N or NRZ code are modulated into PM code to take the positive code N(1) and the negative code N(0) are taken from the complement of the NRZ code, each of which are written into 2 channel track. In reading, the error corrected and the clock pulse can be generated from the reading pulse itself. Also, without modifying the interior circuit of the deck it is possible to use the deck in both the data and audio by adapting a few simple circuits. Over the range of 25HZ-4KHZ, it was possible to write and reproduce at the speed of 787 bps transmission rate.

• Journal of Climate Change Research
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• v.7 no.1
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• pp.19-29
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• 2016

In this study, the emission intensity calculation method of GHGs was developed by considering the characteristics of the models and time series. The telematics device was installed on the car (OBD-II) to collect information on the operation conditions from each sample vehicle of public authorities. Based on emission intensity of GHGs, it presented a methodology of quantitative comparison of GHGs emission by vehicles. Collected driving information of vehicle was used for operating characteristics analysis of the target vehicle, and it was confirmed different operating characteristics through comparison of the results and previous study. GHGs emission intensity were analyzed considering characteristics of vehicle type by passenger car, van, cargo, and considering characteristics of the time series by summer, winter, and intermediate. From the analysis result, it was calculated GHGs emission intensity based on mileage ($g\;CO_2\;eq./km$) and operating time ($g\;CO_2\;eq./sec$).

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.102-109
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• 1987

This study is carrier out to investigate the carrier injection and the characteristics of trapping for the CVD deposited Al2O3 film on Si substrates. Samples used are metal -Al2O3-Si Structure in which metal field plates are used with Aluminium or God. Canier injection and trapping, which result in flat band voltalge shift, occur at fields as low as 1~2 MV/cm. An approximate method is proposed for computing the location of the centroid of the trapped electrons in this paper. Results show that carriers are trapped near the injecting interface at fields less than about 5MV/cm. Because of continued charging, a steady state can not be reached. Therefore the unique I-V curve is obtained when the traps are initially empty. By utilization of applied voltage on each point of the fresh device sample, it is measured the I-V surves for two polarities of applied voltage. The current densities observed in the Al2O3 films are much larger than those obtained in SiO2.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.55-61
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• 1998

Organic light emitting devices from a single layer thin film with a hole transport polymer, poly(N-vinylcarbazole) (PVK) doped with 2-(4-bi phenyl)-5-(4-t-butyl-phenyl) -1,3,4-oxadiazole (Bu-PBD) as electron transporting molecules and Coumurine 6(C6), 1,1,4,4-tetraphenyl-1,3-butadiene (TPB), Rhodamine B as a emitter dye were fabricated. The sing1e layer structure and the use of soluble materials simplify the fabrication of devices by spin coating technique. The active layer consists of one polymer layer that is simply sandwiched between two electrodes, indium-tin oxide (ITO), and aluminum. In this structure, electron and hole inject from the electrodes to the PVK : Bu-PBD active layer. Respectively, Blue, green and orange colored emission spectrum by the use of TPB, C6, Rhodamine B dye emitted at 481nm, 500nm and 585nm were achieved during applied voltages. PVK materials can be useful as the host polymer to be molecularly doped with other organic dyes of the different luminescence colors. And EL color can be tuned to the full visible wavelength.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.1-12
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• 1998

We have implemented receiver for a 3 Dimensional Phased-Array Radar detecting the azimuth angle, the altitude, the range of a target on real time. This system consists of high frequency module, which protects receiver and controls sensitivity, intermediate frequency module, monopulse detector, IQ phase detector, AGC controller. A two-channel receiver with same function is implemented for increasing accuracy of target altitude data by amplitude comparison monopulse method. The TSS sensitivity of the receiver is -98dBm. The bandwidth of the receiver is 500 MHz. We can control the system gain manually by 100 dB when be AGC off. The gain and phase unbalance of two channels is 5 dB and 30 degree, respectively. The image rejection rate of the IQ detector is 30 dB. We used duroid substrate and package- type device.