• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1098-1103
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• 1994

Atomic force microscopy (AFM) images of two conducting layered transition-metal ditellurides, $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$, were examined and their surface and bulk structural features were compared. All the measured unit cell parameters from AFM image were consistent and in complete agreement with the results of the X-ray diffraction. The microscopic structures of corrugated surface tellurium sheets were strongly affected by the modification of metal double zig-zag chains underneath Te surface. Large difference in the height amplitudes of AFM images in $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$ phases was observed and this reflects large difference in the surface electron densities of two phases. On surface, the shorter intralayer Te…Te contacts in $TaTe_2$ induce more electron transfer from Te p-block bands to Ta d-block bands, thus electron density on surface observed in $TaTe_2$ is much lower than that of $Ta_{0.5}$$V_{0.5}$$Te_2$. However, in bulk, interlayer Te…Te contacts in V substituted phase are shorter than those in $TaTe_2$ phase, thus tellurium-to-metal electron transfer occurs more easily in $Ta_{0.5}$$V_{0.5}$$Te_2$ phase.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.663-668
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• 2003

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.911-917
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• 2002

0.5 at% $Na_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were fabricated by mechanical alloying process. 0.5 at% Na$_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te powders were charged at one end of mold and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were charged at the other end of a mold. Then these powders were hot-pressed to form p-type ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ functional gradient materials with the segment ratios (the ratio of ($Pb_{0.7}Sn_{0.3}$)Te to ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ ) of 1:2, 1:1, and 2:1. Power generation characteristics of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ were measured. When the temperature difference ΔT at both ends of the specimen was larger than $300^{\circ}C$, the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ with the segment ratios of 1:2 and 1:1 exhibited larger output power than those of the ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ and 0.5 at% $Na_2$ Te-doped ($Pb_{0.7}Sn_{0.3}$)Te alloys. The maximum output power of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ predicted with the measured Seebeck coefficient and the estimated electrical resistivity was in good agreement with the measured maximum output power.

• Journal of Acupuncture Research
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• v.25 no.6
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• pp.1-12
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• 2008

Objectives : Joongjeo($TE_3$) Supplementation Aekmoon($TE_2$) Draining is a method belongs to Ohaeng-acupuncture, using directional supplementation and draining. Methods : This study was designed to investigate the effects of $TE_3$ supplementation $TE_2$ draining on changes in cerebral blood flow(rCBF) and mean arterial blood pressure(MABP) in normal rats. For these reasons, the present author investigated rCBF and MABP using laser doppler flowmeter in normal rats. In addtion, the present author also investigated action mechanisms of $TE_3$ supplementation $TE_3$ draining on changes in rCBF and MABP too. Results : In this results, $TE_3$ supplementation $TE_2$ draining elevated rCBF in time-dependent manner, but MABP levels decresed by $TE_3$ supplementation $TE_2$ draining. Pre-treatment with indomethacin (IDM), an inhibitor of cyclooxygenase, inhibited increase of rCBF effectively. But pre-treatment with methylene blue(MTB), an inhibitor of guanylate cyclase, decreased rCBF levels. In addition, pre-treatment with IDM also decreased MABP levels, but pre-treatement with MTB increased MABP levels. Conclusions : In conclusion, these results suggest that $TE_3$ supplementation $TE_2$ draining is effective to treat patient with disease related to cerebral ischemia, because $TE_3$ supplementation $TE_2$ draining can increase rCBF. In addition, the mechanisms are thought to be related to guanylate cyclase pathways.

• Journal of the Korean Chemical Society
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• v.61 no.4
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• pp.185-190
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• 2017

One-dimensional CdTe nanorods (NRs) are obtained by the reaction of various Cd precursors with single crystalline Te nanorod templates, which are pre-synthesized from Te precursors by a simple and reproducible solvothermal method. Throughout the process, the diffraction intensity of different crystal facets of single crystalline Te NRs varied with reaction times. Finally, by alloying Cd ions along the axial direction of Te NRs, polycrystalline cubic phase CdTe NRs with diameters of 80-150 nm and length up to $1.2-2.4{\mu}m$ are obtained. The nucleation and growth processes of Te and CdTe NRs are discussed in details, and their properties are characterized by XRD, SEM, TEM, Raman scattering, and UV-vis absorption spectra. It was found that the key elements of synthesizing CdTe NRs such as reaction temperatures and Cd sources will strongly influence the final shape of CdTe NRs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.269-269
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.267-271
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.