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Growth and photoluminescence of the strained ZnTe/ZnMnTe single quantum well  

Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.12, no.6, 2002 , pp. 269-269 More about this Journal
Abstract
ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.
Keywords
ZnTe/ZnMnTe single quantum well; Tensile strain; Photoluminescence; Hot-wall epitaxy;
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1 R. Fiederling, M. Keirn, G. Reuscher, W. Ossau, G.Schmidt, A. Waag and L. W. Molen amp, "Injection andDetection of a Spin-polarized Current in a Light-emittingDiode", Nature. 402 (1999) 787.
2 D. Ferrand, J. Cibert, A. Wasiela, C. Bourgognon, S.Tatarenko, G. Fishman, S. Kolenik, J. Jaroszyski, T.Dietl. B. Barbara and D. Dufeu. "Carrier Induced Ferromagnetic Interactions and Transport Properties of p-ZnMn Te Epilayers", J. Appl. Phys. 87 (2000) 6451.
3 M. Hyun, Y-M. Yu, O. Byungsung, K.-S. Lee, M.-YYoon, P.Y Yu and YD. Choi, "Photoluminescence Characteristicsof Zn Mn Te Epilayers", Sae Mulli 43 (2001)350.
4 Y Ohno, D.K. Young, B. Beschoten, F. Matsukura, H.Ohno and D.D. Awschalom, "Electrical Spin Injection ina Ferromagnetic Semiconductor Heterostructure", Nature402 (1999) 790.
5 M. Ziese, "Spin Electronics", edited by M. Ziese, andM.J. Thornton (Springer-Verlg, New York, 2001).
6 D. Ferrand, C. Bourgognon, J. Cibert, A. Wasiela, S.Tatarenko, Y Merle d' Aubigne, A. Bonnani, D. Stifter,H. Sitter, Le Van Khoi, S. Kolesnik, J. Jaroszynski, M.Sawicki, T. Andrearczyk and T. Dietl, 'Indication ofFerromagnetic Ordering in p-Zn Mn Te', Physcica B284 (2000) 1177.
7 J.K. Furdyna, 'Diluted Magnetic Semiconductors', J.Appl. Phys. 64 (1988) R29.
8 J.K. Furdyna, "Diluted Magnetic Semiconductors, inSemiconductors and Semimetals", Vol. 25, edited by J.K. Furdyna and J. Kossut (Academic Press, New York,1988).
9 H.C. Mertins, H.E. Gumlich and C. Jung, 'Bandgap ofZn Mn Te : Nonlinear Dependence on Composition andTemperature', Semicond. Sci. Technol. 8 (1993) 1634.
10 YM. Yu, S. Nam, K.S. Lee, YD. Choi and O. Byungsung,"Photoluminescence Characteristics of ZnTe Epilayers",J. Appl. Phys. 90 (2001) 807.
11 B.T. Jonker, YD. Park, B.R. Bennett, H.D. Cheong,G. Kioseoglou and A. Petrou, 'Robust Electrical SpinInjection into a Semiconductor Heterostructure', Phys.Rev. B 62 (2000) 8180.
12 T. Taguchi, Y Kawakami and Y Yamada, 'Interface Propertiesand the Effect of Strain of ZnSe/ZnS StrainedlayerSuperlattices', Physica B 191 (1993) 23.
13 YH. Etgens, M. Sauvage-Simkin, R. Pinchaux, J. Massies,N. Jedrecy, A. Waldhauer, S. Tatarenko and P.H.Jouneau, "ZnTe/GaAs(001): Growth Mode and StrainEvolution During the Early Stages of Molecular-beam-epitaxyHeteroepitaxial Growth', Phys. Rev. B 47 (1993)10607.
14 O. Madelung, 'Numerical Data and Function Relationshipsin Science and Technology', Vol. 17, edited byO. Madelung, M. Schulz and H. Weiss (Springer-Verlg,New York, 1982).
15 J.-G. Park, Y-M. Yu, Y Kim, Byungsung 0, M.-YYoon, C.-S. Kim, H.-J. Yun and Y D. Choi, 'Growthand Structural Properties of Zn Mn Te Epilayers byHot-Wall Epitaxy', Sae Mulli 43 (2001) 324.
16 G. Barilero, C. Rigaux, M. Menant, N.H. Hau and W.Giriat, 'Magnetization and Magnetoreflectance in ZnMnTe', Phys. Rev. B 32 (1985) 5144.
17 D. Ferrand, J. Cibert, A. Wasiela, C. Bourgognon, S.Tatarenko, G. Fishman, T. Andrearczyk, J. Jaroszyski, S.Kolenik, T. Dietl, B. Barbara and D. Dufeu, "CarrierinducedFerromagnetism in p-Zn Mn Te", Phys. Rev. B63 .(2001) 85201.