• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Applied Microscopy
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• 제50권
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• pp.7.1-7.10
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• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1022-1025
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• 2001

This paper presents the characteristics of TaN thin-film as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼20%)N$_2$). The electrical and mechanical characteristics of these films investigated with the thickness range 1650∼1870${\AA}$ and room temperature resistivities in the range 178.3 ${\mu}$$\Omega$cm to 3175.7 ${\mu}$$\Omega$cm. The TaN thin-film strain gauge deposited in Ar-(20%)N$_2$atmosphere is obtained a temperature coefficient of resistance(TCR), 0∼-1357 ppm/$^{\circ}C$ in the temperature range 25∼275$^{\circ}C$ and a high temporal stability with a longitudinal gauge factor, 2.92∼3.47. Because of their high resistivity, low TCR and linear gauge factor, these cermet thin-film may allow high-temperature strain gauges miniaturization.

• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 한국진공학회지
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• 제6권1호
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• pp.77-84
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• 1997

DC Magnetron Sputtering 방법으로 원기둥형 Alumina기판(직경 4mm, 길이 11mm) 상에 부(-)의 TCR특성의 TaN0.1(부도체)와 정(+)의 TCR특성의 Cr(금속)박막두께를 적절히 조절하므로써 초정밀 저항기를 제조하였다. 그리고 면저항(Rs)을 1k$\Omega$/수준으로 높이고 보 호막을 형성키 위하여 상부에 $Ta_2O_5$막을 입형 $Ta_2O_5/TaN_{0.1}/Cr/Al_2O_3$(substrate)의 다층 박 막저항체를 제조하였다. 적절한 조건(기판온도, $N_2$(g), Ar(g)의 유속 등)으로 상기 다층박막 내 각 막의 두께를 약10,100과 500nm두께로 증착했을 때, $Rs\approx 1k\Omega/\Box$와 $TCR\approx 20$\pm 5ppm/^{\circ}C$ 의 초정밀 저항체가 제조되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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• pp.100-103
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• 2001

본 연구에서는 무전해도금으로 증착된 구리박막의 열적 및 접착특성에 관하여 고찰하였다. Si 기판에 MOCVD 방법으로 TaN 확산방지막을 증착한 후, 무전해 도금으로 구리박막을 증착하여 Cu/TaN/Si 다층구조를 제조공정하였다. 그리고, Ar 분위기에서 열처리시켰으며, 열처리온도에 따른 비저항 변화를 고찰함으로서 Cu/TaN/Si 계의 열적 특성을 분석하였다. 무전해도금 구리박막의 접착특성은 스크래치 테스트에 의해 평가하였으며, 열적 증착방법과 스퍼터 방법으로 증착된 구리 박막과 비교하였다. 스크래치 테스트 결과, 무전해도금 구리 박막의 접착력이 열적 증착과 스퍼터 방법으로 증착된 구리 박막보다 더 우수하였다.

• 한국세라믹학회지
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• 제29권1호
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.