• 제목/요약/키워드: Ta-N

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Roles of Phosphoric Acid in Slurry for Cu and TaN CMP

  • Kim, Sang-Yong;Lim, Jong-Heun;Yu, Chong-Hee;Kim, Nam-Hoon;Chang, Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.1-4
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    • 2003
  • The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

Microstructure and Piezoelectric Properties of (Na,K)NbO3 System Ceramics Substituted with BNKZ (BNKZ치환된 (Na,K)NbO3계 세라믹스의 미세구조 및 압전 특성)

  • Han, Jong-Dae;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.637-640
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    • 2017
  • In this study, $(1-x)(Na_{0.52}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3-x(Bi_{0.5}(Na_{0.7}K_{0.3})_{0.5}ZrO_3$ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. $NKL-NSTO_3$ ceramics with x=0.01 showed excellent piezoelectric properties. The density (${\rho}$), piezoelectric charge constant ($d_{33}$), planar piezoelectric coupling coefficient ($k_p$), mechanical quality factor ($Q_m$), and dielectric constant (${\varepsilon}_r$) had optimized values of $4.56g/cm^3$, 208 pC/N, 0.43, 96, and 975, respectively.

Numerical study of double diffusive convection due to lateral heating in a rotating annulus (회전하는 환형용기내의 옆면 가열에 의한 이중확산대류에 관한 수치해석)

  • Gang, Sin-Hyeong;Lee, Gyo-Seung;Lee, Jin-Ho
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.21 no.11
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    • pp.1422-1436
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    • 1997
  • Numerical investigations were conducted to study the convective phenomena of an initially stably stratified salt water solution with lateral heating in a uniformly rotating annulus. The method of investigation is the finite difference analysis of the basic conservation equation for an axisymmetric, unsteady, double-diffusive convection and calculation is made for R $a_{\eta}$=2*10$^{5}$ and Ta=10$^{7}$ ~ 2.5*10$^{8}$ . Formation of layered flow structure, merging process of layers, the corresponding temperature and concentration distributions, Nu variation with time are examined. Numerical results show that in each layer, the temperature profile looks 'S'-shaped and the concentration profile is uniform due to the convective mixing. At the interface between adjacent layers, the temperature changes smoothly but the concentration changes rapidly. As the effect of the rotation increases, the generation of rolls at hot wall, the formation and merging of layers are delayed. The average Nu shows the trend of conduction heat transferees the effect of the rotation increases.n increases.

Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B.;Lee, S.S.;Kang, Y.M.;Noh, K.H.;Hong, S.K.;Oh, S.H.;Kang, E.Y.;Lee, S.W.;Kim, J.G.;Shu, C.W.;Seong, J.W.;Lee, C.G.;Kang, N.S.;Park, Y.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.3
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    • pp.141-157
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    • 2001
  • Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

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Plasticity of rice to water extremes: Farmers' genes to mechanisms

  • Bailey-Serres, Julia
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.5-5
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    • 2017
  • Too little and too much water due to climatic events is a significant cause of global food insecurity. Crops are less productive under water-limited conditions and all major crops, with the exception of rice (Oryza sativa), die within a few days of complete submergence. To complement our studies on genes such as SUB1A, (an ERF-VII transcription factor that provides robust submergence tolerance) and AG1 (a TREHALOSE 6-P PHOSPHATASE that promotes establishment of young seedlings underwater), we have retooled INTACT (${\underline{I}}solation$ of ${\underline{N}}uclei$ ${\underline{TA}}gged$ in specific ${\underline{C}}ell$ ${\underline{T}}ypes$) and TRAP (${\underline{T}}ranslating$ ${\underline{R}}ibosome$ ${\underline{A}}ffinity$ ${\underline{P}}urification$) for rice. These technologies enable us to follow dynamics in chromatin, nuclear pre-mRNAs and ribosome-bound mRNAs in meristems and diverse cell types. With these technologies we can better interpret responses to stresses and reestablishment of homeostasis. These include stress acclimation strategies involving changes in metabolism and development, such as dynamics in suberin deposition in sub-epidermal layers of roots that limit water loss under drought and oxygen escape during waterlogging. Our new data uncover dynamic and reversible regulation at multiple levels of gene regulation and provide new insights into processes of stress resilience. Supported by US NSF-PGRP Plasticity (IOS-1238243), Secretome (IOS-1546879) and REU (DBI-146129) grants.

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Multi-point detection of hydrogen using the hetero-core structured optical fiber hydrogen tip sensors and Pseudorandom Noise code correlation reflectometry

  • Hosoki, Ai;Nishiyama, Michiko;Igawa, Hirotaka;Seki, Atsushi;Watanabe, Kazuhiro
    • Journal of Power System Engineering
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    • v.19 no.3
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    • pp.11-15
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    • 2015
  • In this paper, the multi-point hydrogen detection system based on the combination of the hetero-core optical fiber SPR hydrogen tip sensor and interrogator by pseudorandom noise (PN) code correlation reflectometry has been developed. In a light intensity-based experiment with an LED operating at 850 nm, it has been presented that a transmitted loss change of 0.32dB was induced with a response time of 25 s for 4% $H_2$ in $N_2$ in the case of the 25-nm Au, 60-nm $Ta_2O_5$, and 5-nm Pd multi-layers film. The proposed sensor characteristic shows excellent reproducibility in terms of loss level and time response for the in- and out- $H_2$ action. In addition, in the experiment for multi-point hydrogen detection, all sensors show the real-time response for 4% hydrogen adding with reproducible working. As a result, the real-time multi-point hydrogen detection could be realized by means of the combination of interrogating system and hetero-core optical fiber SPR hydrogen tip sensors.

Fabrication and characterization of Biological mass detecing system using PZT microcantilever (PZT 마이크로 켄틸레버를 이용한 생체 물질 무게 감지 소자의 제작 및 분석)

  • Lee, Jeong-Hoon;Hwang, Kyo-Seon;Kang, Ji-Yoon;Kim, Sang-Ho;Ahn, Se-Young;Kim, Tae-Song
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2006-2007
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    • 2002
  • MEMS 공정을 이용하여 $SiN_x$를 지지층으로 한 $SiO_2$/Ta/PZT/Pt 의 박막 구조를 가지는 마이크로 켄틸레버를 제작하였다. 켄틸레버의 전기기계적 특성을 LDV (레이저 미소 변위 측정기)를 이용하여 측정하였으며, 이를 통해 전기기계적 거동을 분석하였다. 또한 무게 감지소자로서의 응용을 위해 Au의 증착을 통한 감도를 측정하였으며, streptavidin의 무게를 감지하기 위해 immobilization 공정을 거쳐 thiol 그룹 및 biotin을 표면에 고정화 시킨후 biotin-streptavidin 결합에 의한 전기기계적 신호 분석을 통해 생체 물질의 무게 감지 소자로의 응용을 평가하였다.

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Annealing Effects of Indium Tin Oxide films grown on 91ass by radio frequency magnetron sputtering technique

  • Jan M. H.;Choi J. M.;Whang C. N.;Jang H. K.;Yu B. S.
    • Journal of the Korean Vacuum Society
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    • v.14 no.3
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    • pp.159-164
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    • 2005
  • Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.

Biased Thermal Stress 인가에 의한 TSV 용 Cu 확산방지막 Ti를 통한 Cu drift 측정

  • Seo, Seung-Ho;Jin, Gwang-Seon;Lee, Han-Gyeol;Lee, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.179-179
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    • 2011
  • 관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.

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Piezoelectric Properties in ZnO Dopped (Na,K)NbO3 Ceramics (ZnO가 첨가된 (Na,K)NbO3계 세라믹스의 압전 특성)

  • Ryu Sung-Lim;Kweon Soon-Yong;Ur Soon-Chul;Kim Si-Chul;Yoo Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.707-711
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    • 2006
  • ZnO was doped up to 0.3 wt% for improving the electrical properties of lead-free $[Li_{0.04}(Na_{0.44}Ko_{0.52})-(Nb_{0.86}\;Ta_{0.10}\;Sb_{0.04})]O_3$ piezoelectric ceramics. The ceramics were fabricated with the conventional sintering processes. Crystal structure of the samples was tetragonal phase regardless of ZnO amount. However, the piezoelectric properties were varied with the ZnO amount. The electro-mechanical coupling factor $(k_p)$ was with the ZnO amount up to 0.2 wt% but decreased with the further addition. the maximum value of $k_p$ was 0.475. Density, piezoelectric charge constant and relative dielectric constant was also showed maximum value at 0.2 wt%. The maximum values are $4.75g/cm^3$, 275 pC/N, 1403, respectively. In contrast, the mechanical quality factor $(Q_m)$ was not varied with increasing the ZnO addition up to 0.2 wt% but rapidly increased at 0.3 wt%.