• Journal of the Korean Magnetics Society
• /
• v.15 no.3
• /
• pp.177-180
• /
• 2005

Ferroelectric $LiTaO_3$ single crystals, grown by the Czochralski method, were thermally treated at temperature $1000^{\circ}C\;and\;1100^{\circ}C$. Electron paramagnetic resonance (EPR) study of stoichiometric $LiTaO_3$ and thermally treated $LiTaO_3$ crystals has been investigated by employing an X-band spectrometer. From the $Fe^{3+}$ EPR spectra, it turned out that there is no change of site location and local site symmetry around $Fe^{3+}$ impurity ion between stoichiometric and thermally treated $LiTaO_3$ single crystals. We confirmed that the ionic state of $Fe^{3+}$ ion changed after thermal treatment. The EPR parameters of $Fe^{3+}$ ion in $LiTaO_3$ single crystals are determined with effective spin Hamiltonian.

• Korean Journal of Materials Research
• /
• v.10 no.11
• /
• pp.749-764
• /
• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.945-949
• /
• 1998

Ta(OC2H5)5와 NH3를 이용하여 Cycle-CVD법으로 산화탄탈륨 막을 증착하였다. Cycle-CVD법에서는 Ta(OC2H5)5와 NH3사이에 불활성 기체를 주입한다. 하나의 cycle은 Ta(OC2H5)5주입, Ar주입, NH3 주입, Ar 주입의 네 단계로 이루어진다. Cycle-CVD법으로 산화탄탈륨 막을 증착할 때, 온도 $250-280^{\circ}C$에서 박막의 증착 기구는 원자층 증착(Atomic Layer Deposition:ALD)이었다. $265^{\circ}C$에서 Ta(OC2H5)5:Ar:NH3:Ar:NH3:Ar의 한 cycle에서 각 단계의 주입 시간을 1-60초:5초:5초:5초로 Ta(OC2H5)5 주입 시간을 변화시키면서 산화탄탈륨 막을 Cycle-CVD법으로 증착하였다. Ta(OC2H5)5주입시간이 증가하여도 cycle 당 두께가 $1.5\AA$/cycle로 일정하였다. $265^{\circ}C$에서 증착된 박막의 누설 전류는 2MV/cm에서 2x10-2A/$\textrm{cm}^2$이었고 열처리후의 산화탄탈륨 막의 누설 전류값은 $10-4A\textrm{cm}^2$ 이하고 감소하였다. 증착한 산화탄탈륨 막의 성분을 Auger 전자 분광법으로 분석하였다. 2$65^{\circ}C$에서 증착한 막의 성분은 탄탈륨 33at%, 산소 50at%, 탄소 5at%, 질소 12at% 이었으며 90$0^{\circ}C$, O2300torr에서 10분 동안 열처리한 박막은 탄탈륨 33at%, 산소 60wt%, 탄소 4at%, 질소 3at%이었다. 박막의 열처리 온도가 높을수록 불순물인 탄소와 질소의 박막 내 잔류량이 감소하였다. 열처리 후의 박막은 O/Ta 화학정량비가 증가하였으며 Ta의 4f7/5와 4f 5/2의 결합 강도가 열처리 전 박막보다 증가하였다. 열처리 후 누설 전류가 감소하는 것은 불순물 감소와 화학정량비 개선 및 Ta-O 결합 강도의증가에 의한 것으로 생각된다.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.20-21
• /
• 2006

In this study, structural and microwave dielectric properties of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb} cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb) ceramics prepared by conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the ${Ba_5}{Ta_4}{O_{15}}$ ceramics were increased continuously with increasing of sintering temperature. And the bulk density and dielectric constant of the ${Ba_5}{Nb_4}{O_{15}}$ ceramics was increased in $1375^{\circ}C{\sim}1400^{\circ}C$ but decerased in $1425^{\circ}C$. In the case of ${Ba_5}{Ta_4}{O_{15}}$ ceramics sintered at $1475^{\circ}C$ and ${Ba_5}{Nb_4}{O_{15}}$ ceramics sintered at $1400^{\circ}C$, The dielectric constant and quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, $-3.06\;ppm/^{\circ}C$ and, 39.55, 28,052 GHz, $5.7\;ppm/^{\circ}C$ respectively.

• Korean Journal of Agricultural and Forest Meteorology
• /
• v.20 no.2
• /
• pp.159-165
• /
• 2018

The seed yield of summer plants is affected by climate change due to high temperature. High temperature during the reproductive growth period decrease pod, seed weight in soybean. This study was conducted at National Institute of Crop Science (NICS) during the growing season. The objective of this study was to determine the effect of high temperature on growth and seed yield responses of soybean varieties using a temperature gradient chamber (TGC). In 2017, the Daewonkong (DWK), Pungsannamulkong (PSNK), and Deapungkong (DPK) were grown in three TGCs. Four temperature treatments, Ta (near ambient temperature), Ta+1 (ambient temperature+$1^{\circ}C$), $Ta+2^{\circ}C$ (ambient temperature+$2^{\circ}C$), $Ta+3^{\circ}C$ (ambient temperature+$3^{\circ}C$), $Ta+4^{\circ}C$ (ambient temperature+$4^{\circ}C$), were established by dividing the rows along which the temperature gradient was created. In all three cultivars, beginning bloom (R1) delayed at elevated temperature in $Ta+4^{\circ}C$. In addition, the days to beginning of seed fill and maturity were longer under higher temperature. The numbers of pod, 100 seed weight, and seed yield increased at elevated temperature in DWK. In contrast, seed yield components of PSNK and DPK were reduced in $Ta+4^{\circ}C$. The results suggest that 100 seed weight and seed size of soybean was low by increased temperature in $Ta+4^{\circ}C$ of PSNK and DPK.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.264-265
• /
• 2014

This Paper reports the photocatalytic activity of $g-C_3N_4/NaTaO_3$ hybrid composite photocatalysts synthesized by ball-mill method. The $g-C_3N_4$ and $NaTaO_3$ were individually prepared by Solid state reaction and microwave hydrothermal process, respectively. The $g-C_3N_4/NaTaO_3$ composite showed the enhanced photocatalytic activity for degradation of rhodamine B dye (Rh. B) under simulated solar light irradiation. The results revealed that the band-gap energy absorption edge of hybrid composite samples was shifted to a longer wavelength as compared to $NaTaO_3$ and the 50 wt% $g-C_3N_4/NaTaO_3$ hybrid composite exhibited the highest percentage (99.6 %) of degradation of Rh. B and the highest reaction rate constant ($0.013min^{-1}$) in 4 h which could be attributed to the enhanced absorption of the hybrid composite photocatalyst in the UV-Vis region. Hence, these results suggest that the $g-C_3N_4/NaTaO_3$ hybrid composite exhibits enhanced photocatalytic activity for the degradation of rhodamine B under simulated solar light irradiation in comparison to the commercial $NaTaO_3$.

• Journal of the Korean Ceramic Society
• /
• v.31 no.11
• /
• pp.1330-1336
• /
• 1994

Ta2O5 films were deposited on the p-Si(100) substrates by ECR-PECVD and annealed in O2 atmosphere. The thicknesses of Ta2O5/SiO2 layers were measured by an ellipsometer and a cross-sectional TEM. Annealing in O2 atmosphere enhanced the stoichiometry of the Ta2O5 film and reduced the impurity carbon content. Ta2O5 films were crystallized at the annealing temperatures above 75$0^{\circ}C$. The best leakage current characteristics and the maximum dielectric constant of Ta2O5/SiO2 film capacitor were observed in the specimen annealed at $700^{\circ}C$ and 75$0^{\circ}C$, respectively. The flat band voltage of the Al/Ta2O5/SiO2/p-Si MOS capacitor was varied in the range of -0.6~-1.6 V with the annealing temperature. The conduction mechanism in the Ta2O5 film, the variation of the effective oxide charge density with the annealing temperature, and the effective electric field distribution in the Ta2O5/SiO2 double layer were also discussed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2003.04a
• /
• pp.29-29
• /
• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.100-103
• /
• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.7
• /
• pp.793-796
• /
• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.