• 전기전자학회논문지
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• 제14권1호
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• pp.55-64
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• 2010

본 논문에서는 기존 TIGBT의 구조적 한계로 인한 순방향 전압강하와 스위칭 손실간의 트레이드-오프 관계를 극복하고, 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 pMOS 삽입형 트렌치 TIGBT를 제안하였다. 제안된 구조는 TIGBT소자의 셀(Cell)과 셀 사이에 존재하는 폴리(poly) 게이트 영역에 pMOS를 형성시킨 구조로 n-드리프트 층으로의 전자, 정공의 주입효율을 증가시켜 기존 구조보다 더 낮은 온-저항과 빠른 스위칭 손실을 얻도록 설계된 구조이다. 시뮬레이션 결과 제안된 구조의 단일 소자인 경우 순방향 전압강하와 스위칭 특성은 각각 1.67V와 3.1us로, 기존 구조가 갖는 2.25V와 3.4us비해 각각 약 25%의 감소된 순방향 전압강하와 약 9% 감소된 스위칭 특성을 보였다.

• 전기전자학회논문지
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• 제11권4호
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• pp.158-164
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• 2007

본 논문에서는 전력용 스위칭 소자로 널리 활용되고 있는 IGBT 소자 중 수평 게이트 구조보다 우수한 특성을 지닌 트렌치 게이트 IGBT(TIGBT) 구조를 채택하여, 기존의 TIGBT가 갖는 구조적 한계를 극복하고 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 수직형 TIGBT를 제안하였다. 첫 번째로 제안한 IGBT 소자는 P+컬렉터를 산화막으로 고립시킴으로서 N-드리프트 층으로의 정공 주입효율을 극대화하여 기존 구조보다 더 낮은 순방향 전압강하를 얻도록 설계된 구조이다. 두 번째 제안한 구조는 양 게이트 사이의 P-베이스 구조를 볼록하게 형성함으로서 게이트 쪽으로 집중되는 전계의 일부를 접합부 쪽으로 유도하여 기존 구조보다 더 높은 항복전압을 얻을 수 있다. 또한 P-베이스의 볼록한 구조가 턴-오프 시 정공의 흐름을 개선시켜 기존 구조보다 더 빠른 턴-오프 시간을 갖게 된다. 시뮬레이션 결과 첫 번째 구조의 특징은 2.4V의 순방향 전압강하 특성을 갖는 기존의 IGBT 구조보다 상당히 낮은 2.1V의 순방향 전압강하 특성을 나타냈으며, 두 번째 구조는 기존의 IGBT 보다 10V정도 높아진 항복전압 특성을 보였다. 또한 두 번째 구조에서 기존 구조와 비교해볼 때 9ns 정도 빠른 턴-오프 시간을 보였다. 최종적으로 제안된 새로운 구조의 TIGBT는 위 두 구조가 갖는 우수한 전기적 특성을 모두 갖도록 결합한 것이며, 시뮬레이션 결과 기본의 TIGBT 소자보다 순방향 전압강하, 항복특성, 그리고 턴 오프 특성이 모두 우수한 결과를 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.74-75
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• 2008

TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.758-763
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.