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http://dx.doi.org/10.4313/JKEM.2006.19.10.912

Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode  

Lee Jong-Seok (고려대학교 전기공학과)
Kang Ey-Goo (극동대학교 컴퓨터정보표준화학부)
Sung Man-Young (고려대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.10, 2006 , pp. 912-917 More about this Journal
Abstract
In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.
Keywords
Trench; IGBT; Blocking voltage; Forward voltage drop; Latch up; Turn-off time;
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