• Geomechanics and Engineering
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• 제18권1호
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• pp.71-83
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• 2019

This investigation presented conventional triaxial and creep-permeability tests on sandstones considering thermally-induced damage (TID). The TID had no visible effects on rock surface color, effective porosity and permeability below $300^{\circ}C$ TID level. The permeability enlarged approximately two orders of magnitude as TID increased to $1000^{\circ}C$ level. TID of $700^{\circ}C$ level was a threshold where the influence of TID on the normalized mass and volume of the specimen can be divided into two linear phases. Moreover, no prominent variations in the deformation moduli and peak strength and strain appeared as TID< $500^{\circ}C$ level. It is interesting that the peak strength increased by 24.3% at $700^{\circ}C$ level but decreased by 11.5% at $1000^{\circ}C$ level. The time-related deformation and steady-state creep rate had positive correlations with creep loading and the TID level, whereas the instantaneous modulus showed the opposite. The strain rates under creep failure stresses raised 1-4 orders of magnitude than those at low-stress levels. The permeability was not only dependent on the TID level but also dependent on creep deformation. The TID resulted in large deformation and complexity of failure pattern for the sandstone.

• 제어로봇시스템학회논문지
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• 제17권11호
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• pp.1125-1131
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• 2011

This paper presents a control theoretic approach to realizing fault tolerance in asynchronous sequential circuits. The considered asynchronous circuit is assumed to work in space environment and is subject to faults caused by total ionizing dose (TID) effects. In our setting, TID effects cause permanent changes in state transition characteristics of the asynchronous circuit. Under a certain condition of reachability redundancy, it is possible to design a corrective controller so that the closed-loop system can maintain the normal behavior despite occurrences of TID faults. As a case study, the proposed control scheme is applied to an asynchronous arbiter implemented in FPGA.

• Nuclear Engineering and Technology
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• 제56권2호
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• pp.568-574
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• 2024

The development of radiation-tolerant radio-frequency (RF) systems can be a solution for applications in extreme radiation environments, such as nuclear power plant monitoring and space exploration. Among the crucial components within an RF system, the low noise amplifier (LNA) stands out due to its vulnerability to TID effects, mainly relying on transistors as its main devices. In this study, the TID effects in the LNA using standard 0.18 ㎛ complementary metal oxide semiconductors (CMOS) technology are estimated and analyzed. The results show that the LNA can withstand absorbed radiation up to 100 kGy. The S₂₁, S₁₁, noise figure (NF), stability (K), and linearity of the third input intercept point (IIP3) slightly shifted from the initial values of 0.8312 dB, 0.793 dB, 0.00381 dB, 1.34406, and 2.36066 dBm, respectively which are still comparable to the typical performances. Moreover, the standard 0.18 ㎛ technology has demonstrated its radiation tolerance, as it exhibits negligible performance degradation in the conventional LNA even when exposed to radiation levels up to 100 kGy. In this context, simulation approach offers a means to predict the TID effects and estimate the radiation exposure limit for electronic devices, particularly when transistors are used as the primary RF components.

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.3985-3995
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• 2022

The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) can cause permanent damages on such nanoscale electronic devices, and current state-of-the-art technologies to tackle TID make use of expensive radiation-hardened devices. This paper focuses on a novel and different approach: using machine learning algorithms on consumer electronic level Field Programmable Gate Arrays (FPGAs) to tackle TID effects and monitor them to replace before they stop working. This condition has a research challenge to anticipate when the board results in a total failure due to TID effects. We observed internal measurements of FPGA boards under gamma radiation and used three different anomaly detection machine learning (ML) algorithms to detect anomalies in the sensor measurements in a gamma-radiated environment. The statistical results show a highly significant relationship between the gamma radiation exposure levels and the board measurements. Moreover, our anomaly detection results have shown that a One-Class SVM with Radial Basis Function Kernel has an average recall score of 0.95. Also, all anomalies can be detected before the boards are entirely inoperative, i.e. voltages drop to zero and confirmed with a sanity check.

• 한국항공우주학회지
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• 제41권1호
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• pp.79-84
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• 2013

DC/DC 컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 효율이 높은 전력변환기이다. DC/DC 컨버터는 PWM-IC(펄스폭 변조 집적회로) 제어기, MOSFET(산화물-반도체 전계 효과 트랜지스터), 인덕터, 콘덴서 등으로 구성되어있다. 코발트 60 ($^{60}Co$) 저준위 감마발생기를 이용한 TID실험에서 방사선의 영향으로 PWM-IC의 전기적 특성중에 문턱전압과 옵셋전압이 증가되고, SEL에 적용된 4종류의 중이온 입자는 PWM-IC의 파형을 불안정하게 만든다. 또한, 입/출력관계의 파형을 SPICE 시뮬레이션 프로그램으로 관찰하였다. PWM-IC의 TID 실험은 30 Krad 까지 수행하였으며, SEL 실험을 제어보드를 구현한 후 LET($MeV/mg/cm^2$)별 cross section($cm^2$)으로 연구하였다.

• 한국항공우주학회지
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• 제42권11호
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• pp.981-987
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• 2014

DC/DC 컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 효율이 높은 전력변환기이다. DC/DC 컨버터는 MOSFET(산화물-반도체 전계 효과 트랜지스터), PWM-IC(펄스폭 변조 집적회로) 제어기, 인덕터, 콘덴서 등으로 구성되어있다. MOSFET는 스위치 기능을 수행하는데 코발트 60 ($^{60}Co$) 저준위 감마발생기를 이용한 TID 실험에서 방사선의 영향으로 문턱전압과 항복전압의 변화와 SEGR 실험에 적용된 5종류의 중이온 입자는 MOSFET의 게이트(gate)에 영향을 주어 게이트가 파괴된다. MOSFET의 TID 실험은 40 Krad 까지 수행하였으며, SEGR 실험은 제어보드를 구현한 후 LET(MeV/mg/$cm^2$)별 cross section($cm^2$)을 연구하는데 있다.

• 전기학회논문지
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• 제66권3호
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

• Nuclear Engineering and Technology
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• 제50권8호
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• pp.1298-1305
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• 2018

The use of System-on-Chip (SoC) solutions in the design of on-board data handling systems is an important step towards further miniaturization in space. However, the Total Ionizing Dose (TID) and Single Event Effects (SEE) characterization of these complex devices present new challenges that are either not fully addressed by current testing guidelines or may result in expensive, cumbersome test configurations. In this paper we report the test setups, procedures and results for TID testing of a SoC microcontroller both using standard $^{60}Co$ and low-energy protons beams. This paper specifically points out the differences in the test methodology and in the challenges between TID testing with proton beam and with the conventional gamma ray irradiation. New test setup and procedures are proposed which are capable of emulating typical mission conditions (clock, bias, software, reprogramming, etc.) while keeping the test setup as simple as possible at the same time.

• 전기전자학회논문지
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• 제27권3호
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• pp.303-307
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• 2023

본 논문은 Buried Channel Array Transistor(BCAT) 소자의 Oxide 내부에 Total Ionizing Dose(TID) effects으로 인한 Electron-Hole Pair의 생성이 유도되어, Oxide 계면의 Hole Trap Charge의 증가에 따른 누설전류의 증가와 문턱 전압의 변화를 기존에 제안한 Partial Isolation Buried Channel Array Transistor(Pi-BCAT)구조와 비교 시뮬레이션 하여, Pi-BCAT 소자의 증가한 Oxide 면적과 상관없이 변화한 누설전류와 문턱 전압에서의 특성이 비대칭 도핑 BCAT 구조보다 우수함을 보여 준다.

• Journal of Astronomy and Space Sciences
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• 제22권4호
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• pp.537-558
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• 2005

본 논문에서는 HAUSAT-2위성이 운용될 케도의 우주 방사능 환경 및 총 피폭효과(Total Ionizing Dose), 단일사건 효과(Single Event Effects) 등에 대해 분석하였다. 총 피폭효과에 영향을 미치는 우주 방사능은 포획된 양성자, 전자, 태양 양성자 및 우주선이다. 총 피폭효과는 선량 심도선 분석을 통해 해석을 수행하였으며, DMBP(Design Margin Breakpoint) 방법과 3-D 구분구적법을 이용하여 HAVSAT-2의 부품의 총 피폭량에 대한 내성을 검증하였다. 단일사건 효과에 대하여 위성체 외부와 내부 방사능 환경으로 양성자와 중이온에 대하여 선형에너지 전달량(LET) 스펙트럼을 분석하였으며, HAUSAT-2의 전자소자로 사용예정인 MPC860T2B 마이크로프로세서와 메모리 K6X8008T2B에 대한 SEU(Single Event Upset) 및 SEL(Single Event Latch-up) 발생률을 추정하였다. 분석 결과 SEU는 운용 중에 수차례 발생하며 SEL 발생은 임무기간동안 일어나지 않을 것으로 추정되었다. HAUSAT-2는 소프트웨어 해밍코드 EDAC을 이용하여 SEU 발생에 대처할 수 있는 시스템 레벨의 설계를 반영하였다. 이 연구에서 수행된 방사능 해석은 ESA의 SPENVIS소프트웨어를 이용하였다.