• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.153-162
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• 2001

In this paper, space radiation environment and total ionizing dose(TID) effect have been analyzed for the KOMPSAT-2 operational orbit. It has been revealed that the trapped protons are concentrated in the SAA(South Atlantic Anomaly) area and that the trapped protons and electrons, and solar protons are main factors affecting TID. It turned out that low energy Particles can be effectively blocked by aluminum shielding thickness, but high energy Particles can not be effectively blocked by increasing aluminum shielding thickness. KOMPSAT-2 total radiation dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values ran be used as the criteria for the selection of electronic parts and shielding thinkness of the KOMPSAT-2 structure or electronic box.

• Journal of Institute of Control, Robotics and Systems
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• v.17 no.11
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• pp.1125-1131
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• 2011

This paper presents a control theoretic approach to realizing fault tolerance in asynchronous sequential circuits. The considered asynchronous circuit is assumed to work in space environment and is subject to faults caused by total ionizing dose (TID) effects. In our setting, TID effects cause permanent changes in state transition characteristics of the asynchronous circuit. Under a certain condition of reachability redundancy, it is possible to design a corrective controller so that the closed-loop system can maintain the normal behavior despite occurrences of TID faults. As a case study, the proposed control scheme is applied to an asynchronous arbiter implemented in FPGA.

• Journal of IKEEE
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• v.27 no.3
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• pp.303-307
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• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• International Journal of Aeronautical and Space Sciences
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• v.3 no.2
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• pp.40-45
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• 2002

A radiation analysis is performed for the Ka and Ku-band transponder of the Communications and Broadcasting Satellite (CBS) that is planned for launch into the geo-synchronous orbit. A particular attention is given to calculation of Total Ionizing Dose (TID) for the mission life time of 15 + 3 years. A numerical modeling of the charged particles at the geo-synchronous orbit is undertaken. The charged particles from the modeling are then transported through the mechanical structure and component housings of the transponder. A set of locations are selected for the detailed calculation of TID. The results from the present calculation show that three-dimensional modeling of the component housings as well as the mechanical structure of the spacecraft is requisite in order to acquire a reliable calculation of TID.

• Aerospace Engineering and Technology
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• v.7 no.1
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• pp.68-75
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• 2008

Space radiation environments depend on satellite mission orbit, period, and date, and it can be predicted by simulation. Total Ionizing Dose(TID) can be predicted by Dose-depth Curve which only inform the dose level depending on the shielding thickness. So detail effective shielding analysis considering real structure is necessary to predict part level TID. For this purpose, program is developed to calculate shielding thickness distribution by structure modeling and ray trace from certain point in the structure. Finally TID at certain point in the 3-dimensional structure can be calculated by integration of shielding distribution result and dose-depth curve data. Using this program, TID is analyzed at part level certain point by modeling of equipment box structure in the satellite.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of the Korea Society for Simulation
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• v.19 no.4
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• pp.123-128
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• 2010

The space radiation/total ionizing Dose(TID) and its effects, and the GEO satellite system design considerations in space radiation environment are studied in this paper using Spenvis(Space Environment Information System). The GEO satellite system in space environment is simulated by NASA AP8/AE8, JPL91 and NRL CREME models, repectively for trapped particle, solar proton and cosmic-ray. The total ionizing Dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values can be used as the criteria for the selection of electronic parts and shielding thickness of the Digital Channel Amplifier(DCAMP) structure.

• Bulletin of the Korean Space Science Society
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• 2005.04a
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• pp.143-147
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• 2005

This paper describes the analysis of radiation environment and effects. TID(Total ionizing Dose) and SEE(Single Event Effects) analysis are implemented. The HAUSAT-2 is a 25kg class nanosatellite which is operated at sun-synchronous orbit at an altitude 650km. Trapped proton and Electron, Solar Proton, Galactic Cosmic Ray models are considered to HAUSAT-2 radiation environment model. Total Dose-depth curve provides TID degree and components are verified by DMBP method and Sectoring analysis. SEE are analysed with Radiation Test Report. Existing Radiation Test Reports are use to SEE analysis of HAUSAT-2.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.11
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• pp.84-91
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• 2006

Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.507-511
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• 2024

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.