• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.42-50
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• 2011

One of the important applications of THz time-domain spectroscopy (TDS) is the detection of explosive materials through identification of vibrational fingerprint spectra. Most recent THz spectroscopic measurements have been made using pellet samples, where disorder effects contribute to line broadening, which results in the merging of individual resonances into relatively broad absorption features. To address this issue, we used the technique of parallel plate waveguide (PPWG) THz-TDS to achieve sensitive characterization of three explosive materials: TNT, RDX, and HMX. The measurement method for PPWG THz-TDS used well-established ultrafast optoelectronic techniques to generate and detect sub-picosecond THz pulses. All materials were characterized as powder layers in 112 ${\mu}m$ gaps in metal PPWG. To illustrate the PPWG THz-TDS method, we described our measurement by comparing the vibrational spectra of the materials, TNT, RDX, and HMX, applied as thin powder layers to a PPWG, or in conventional sample cell form, where all materials were placed in Teflon sample cells. The thin layer mass was estimated to be about 700 ${\mu}g$, whereas the mass in the sample cell was ~100 mg. In a laboratory environment, the absorption coefficient of an explosive material is essentially based on the mass of the material, which is given as: ${\alpha}({\omega})=[ln(I_R({\omega})/I_S({\omega}))]m$. In this paper, we show spectra of 3 different explosives from 0.2 to 2.4 THz measured using the PPWG THz-TDS.

• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.454-460
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• 2013

We present qualitative and quantitative component analyses on compound explosives via Terahertz time-domain spectroscopy (THz-TDS) based on a combination of wavelet thresholding and wavelength selection. Despite its importance, the field of signal processing of THz signals of compound plastic explosives is relatively unexplored. In this paper, experiment results from explosives Composition B-3 and Pentolite are newly presented, suggesting a novel signal processing procedure for in situ compound explosives detection. The proposed signal processing method demonstrates effective component analysis even in noisy and humid environments, showing significant decrease in component concentration percentage error of approximately 22.7% for Composition B-3 and 48.8% for Pentolite.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.161-161
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• 2012

본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.503-506
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• 2001

When DC voltages from 5 V up to 90 V are applied to a transmitter chip excited by an ultrafast lacer beam, the terahertz electromagnetic pulses and their spectra are changed. The spectrum shifts to the high frequency range when the high DC voltage is applied to the chip. At that time, the signal-to-noise ratio is increased from 250: 1 to 10,000: 1. The spectrum can expand up to 4 THz by optimal realignment of the THz system. Also, two terahertz electromagnetic pulses are generated from a receiver chip when the laser detection beam is reflected to the back side of the chip.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.569-575
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• 2013

In this paper, we present a photonic approach for generating highly stable coherent sub-terahertz (THz) signals for wireless communications. As proof-of-concept we transmit data at 100 GHz carrier frequency using on-off keying modulation and heterodyne detection. The sub-THz carrier signals are generated by photo-mixing two optical carrier signals at different frequencies, extracted from an optical frequency comb. We introduce a novel system to stabilize the phase of the optical carrier signals. Error-free transmission is successfully achieved up to a bit rate of 8.5 Gbit/s at 100 GHz.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• ETRI Journal
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• v.36 no.1
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• pp.159-162
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• 2014

In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be $540^{\circ}C$ to $580^{\circ}C$ for the initial excess arsenic density of $2{\times}10^{19}/cm^3$ to $8{\times}10^{19}/cm^3$.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.553-559
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• 2005

Pulsed terahertz (THz) radiation was generated by optical rectification and detected by a fee space electro-optic sampling (FS-EOS) method. We used ZnTe (110) crystals for both generation and detection. By coating dielectric anti-reflection film on the ZnTe crystal surface, we can reduce the reflectance of a pump laser beam from $30\%$ to $2\%$, and the terahertz pulse amplitude increased $27\%$ compared with an uncoated crystal. A wider bandwidth of THz radiation was obtained by using a thinner crystal but the signal intensity was decreased in this case. And variations of THz radiation by changing orientation of the ZnTe crystal with respect to the pump (or probe) laser polarization, and by changing the power of the pump laser have also been investigated and discussed.