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http://dx.doi.org/10.4218/etrij.14.0213.0319

Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process  

Moon, Kiwon (Creative Future Research Laboratory, ETRI)
Choi, Jeongyong (Creative Future Research Laboratory, ETRI)
Shin, Jun-Hwan (Creative Future Research Laboratory, ETRI)
Han, Sang-Pil (Creative Future Research Laboratory, ETRI)
Ko, Hyunsung (Creative Future Research Laboratory, ETRI)
Kim, Namje (Creative Future Research Laboratory, ETRI)
Park, Jeong-Woo (Creative Future Research Laboratory, ETRI)
Yoon, Young-Jong (Creative Future Research Laboratory, ETRI)
Kang, Kwang-Yong (Industry-University Cooperation Foundation, Changwon National University)
Ryu, Han-Cheol (Department of Car Mechatronics, Sahmyook University)
Park, Kyung Hyun (Creative Future Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.36, no.1, 2014 , pp. 159-162 More about this Journal
Abstract
In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be $540^{\circ}C$ to $580^{\circ}C$ for the initial excess arsenic density of $2{\times}10^{19}/cm^3$ to $8{\times}10^{19}/cm^3$.
Keywords
LTG-GaAs; terahertz wave; photomixer;
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