• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.513-518
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• 2006

An investigation of the transport properties of polysilicon TFTs, using sequential laterally solidified, SLS, material, is presented. This material has a location controlled distribution of grain boundaries, GBs, which makes it particularly useful for the analysis of their influence on the performance of polysilicon TFTs, and to address the issue of the role of spatially localised trapping states. The experimental results were analyzed by using numerical simulations, and the effective medium approximation was compared with a discrete grain model.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.33-36
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• 2000

Active-controlled field emitter arrays (ACFEAs) are developed by monolithically integrating molybdenum field emitter arrays with amorphous silicon thin film transistors (a-Si：H TFTs) on glass substrate. Transfer and output characteristics of the fabricated ACFEAs showed that the emission currents of FEAs can be accurately controlled by the gate bias voltages of TFTs. Also, the emission currents of the ACFEAs kept stable without any fluctuations during the 30 min-operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.515-518
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• 2002

In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.261-264
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• 2007

We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.

• Journal of Information Display
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• v.6 no.2
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• pp.12-15
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.40-40
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• 2009

The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and $2{\mu}m$ were used, while the thickness of the gate dielectrics($SiN_x/SiO_2$) was fixed at 65nm(40nm/25nm). The electrical characteristics show that the kink effect is reduced at the LTPS TFTs, and degradation from the hot-carrier effect was also decreased by increasing GOLDD length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.203-203
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• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.8-8
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• 2009

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ ratio from 1.2 to 1.8%. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.401-404
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• 2004

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.