Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2015.08a
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- Pages.204.1-204.1
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- 2015
Effects of multi-layered active layers on solution-processed InZnO TFTs
- Choi, Won Seok (Department of Materials Science and Engineering, The University of Seoul) ;
- Jung, Byung Jun (Department of Materials Science and Engineering, The University of Seoul) ;
- Kwon, Myoung Seok (Department of Materials Science and Engineering, The University of Seoul)
- Published : 2015.08.24
Abstract
We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of