• Korean Journal of Acupuncture
• /
• v.35 no.2
• /
• pp.105-115
• /
• 2018

Objectives : This research aimed to verify the validities of contraindicated acupoints in acupuncture treatment in Zhenjiudacheng. Methods : We investigated contraindicated acupoints when performing needling in Zhenjiudacheng, then verified them in today's medical knowledge and clinical studies. Results : In Zhenjiudacheng, 39 acupoints - LU2, LI4, LI13, LI14, LI16, ST1, ST9, ST12, ST17, ST25, ST30, ST42, SP6, SP11, SI18, BL8, BL9, BL56, KI11, TE7, TE8, TE19, TE20, GB3, GB18, GB21, GV10, GV11, GV17, GV22, GV24, CV1, CV4, CV5, CV8, CV9, CV15, CV17 and EX-HN11 - were described to need a careful approach in acupuncture treatment and 21 acupoints among them had contraindications. Most of the contraindications can be explained based on anatomical knowledge and results of clinical studies, and acupuncture treatment at the 39 contraindicated acupoints can induce injury of tissues or organs near the acupoints. Conclusions : The contraindicated acupoints in acupuncture treatment in Zhenjiudacheng seem to have been classified based on the adverse events experienced by doctors at that time. Therefore careful acupuncture treatment at these acupoints is needed to avoid injury to tissue or organs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.842-844
• /
• 2004

Ternary tellurite glassy systems $(CuO-V_2O_5-TeO_2)$ have been synthesised using tellurium oxide as a network former and copper oxide as network modifier. The addition of a transition-matal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $CuO-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity ( up to $6.03{\times}10^{-3}S/cm$) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

• Transactions of the Society of Information Storage Systems
• /
• v.1 no.1
• /
• pp.93-98
• /
• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Bulletin of the Korean Chemical Society
• /
• v.19 no.12
• /
• pp.1283-1293
• /
• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.6
• /
• pp.389-392
• /
• 1998

We have investigated the crystal properties of the Cd0.96Zn0.04Te(CZT) films evaporated on the Si(100) substrates by Elecctron Beam Evaporator(EBE) techique. The compositions of the As-preared films were different about 4% of atomic ratio, The films stucture was observad to be polycrystalline in cubic phase. Diffraction peaks were notable at the substrate temperature of $300^{\circ}C$. The reflectance measurements yield $E_1$=3.25~3.29 eV $E_1$+${\Delta}_1$=3.76~3.83 eV and $E_2$=5.08 eV,showing that the films wear in cubic phase. For the film evaporated at the substrate temperature of $150^{\circ}C$, the peaks of photocurrent are at 720nm and 980nm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2007.06a
• /
• pp.221-225
• /
• 2007

We have prepared $\delta$-phase SbTe alloy with various Sb contents of 64, 72, and 76 at. % and investigated the phase change temperature, the crystal structures of $\delta$-phase SbTe alloy, and determined the ovonic threshold switching voltages with edge contact type phase transition dimensions. As a result, the crystallization temperature is slightly reduced from 126 to $122^{\circ}C$, whereas the melting temperature is not changed. The ovonic threshold switching voltage is reduced from 1.6 to 0.9 V as increasing the Sb content from 64 to 76 at. %. It is found that the reductions of crystallization temperature and the ovonic threshold switching voltage are closely related with the interplanar spacing between adjacent atomic layers and the stacking number of atomic layers in a unit cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.865-868
• /
• 2004

열 진공 증착법(thermal vacuum evaporation)에 의해 p-형 열전박막을 $3{\times}10^{-4}{\sim}3{\times}10^{-6}$ Torr의 범위에서 유리 기판 위에 제조하였다. 제조된 박막의 전기저항은 고진공일수록 저항이 증가하였으며, $Bi_2Te_3$와 $Sb_2Te_3$상을 가지고 있었다. 박막의 조성은 기판의 위치에 따라 변화하였고, 원자 번호가 작을수록 위치의 영향이 크고, 반대로 원자번호가 큰 원소는 그 영향이 작았다. 또한 고진공에서 제조된 박막일수록 상대적으로 저진공에 비해 조성의 변화가 적게 나타났다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.8 no.6
• /
• pp.629-635
• /
• 1997

The theory of characteristic modes for coaxial waveguide with periodic axial slots is used to derive the weighted eigenvalue equation for calculating the characteristic values and the characteristic currents. Once the characteristic values and the characteristic currents are obtained, the important quantities such as the equivalent magnetic current, radiation patterns, and RCS are determined. Numerical results of the equivalent magnetic currents, radiation patterns, and RCS are compared with those obtained by use of the method of moments. A fairly good correspondence is observed between them.

• Progress in Superconductivity and Cryogenics
• /
• v.21 no.4
• /
• pp.6-8
• /
• 2019

Iron-based superconductors (IBSs) possess nematic phases in which rotational symmetry of the electronic structure is spontaneously broken. This novel phase has attracted much attention as it is believed to be closely linked to the superconductivity. However, observation of the symmetry broken phase by using a macroscopic experimental tool is a hard task because of naturally formed twin domains. Here, we report on a novel detwinning method by using a magnetic field on FeTe single crystal. Detwinning effect was measured by resistivity anisotropy using the Montgomery method. Our results show that FeTe was detwinned at 2T, which is a relatively weak field compared to the previously reported result. Furthermore, detwinning effect is retained even when the field is turned off after field cooling, making it an external stimulation-free detwinning method.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.11 no.6
• /
• pp.111-117
• /
• 2002

The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.