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Growth of High Quality $Cd_{0.96} Zn_{0.04} Te$ Epilayers Used for an Far-infrared Sensor and Radiation Detector  

Kim, B. J. (Insitute for Advanced Materials Processing, Tohoku University)
Publication Information
Transactions of the Korean Society of Machine Tool Engineers / v.11, no.6, 2002 , pp. 111-117 More about this Journal
Abstract
The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.
Keywords
Cd ZnTe; HWE; Heteroepitaxy; Free exciton; XRD; Photoluminescence;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 /
[ K. Zannio;R.K. Willardson(ed.);A.C. Beer(ed.) ] / Semiconductors and Semimetals   DOI
2 Large Area Deposition of Cd1-xZnxTe on GaAs and Si Substrates by Metalorganic Chemical Vapor Deposition /
[ N.H. Karam;R.Sudharsanan;A.Mastrovito;M.M. Sanfacon;F.T. J. Smith;M. Leonard;N.A. El-Masry ] / J. Electron. Mater.   DOI   ScienceOn
3 HWE growth and evaluation of CdTe epitaxial films on GaAs /
[ J.F. Wang;K. Kikuchi;B.H. Koo;Y. Ishikawa;W. Uchida;M. Isshiki ] / J. Crystal Growth   DOI
4 Characterization and growth of high quality ZnTe epilayers by hot-wall Epitaxy /
[ S.N. Nam;J.K. Rhee;B.S. O;K.S. Lee;Y.D. Choi;G.N. Jeon;C.H. Lee ] / J. Crystal Growth   DOI   ScienceOn
5 Growth and Evaluation of Cd1-yZnyTe Epilaters on (100) GaAs Substrates by Hot Wall Epitaxy /
[ B.H.Koo;J.Wang;Y.Ishikawa;M.Isshiki ] / Jpn. J. Appl. Phys.   DOI
6 Liquid phase epitaxial growth of large area Hg1-xCdxTe epitaxial layers /
[ D.D. Edwall;E.R.Gertner;E.Tennant ] / J. Appl. Phys.   DOI
7 Determination of the saturated vapor pressure of solid Zinc and Cadmum Tellurides /
[ I. Korneeva;A. V. Belsyer;A.V. Novoselova ] / Zh. Neorg. Khim.
8 Bound excitons and resonant Raman scattering in <TEX>$Cd_xZn_{l-x}Te$</TEX> (0.9 < = x < = 1) /
[ S.Seto;A.Tanaka;T.Masa;S. Dairaku;M. Kawasima ] / Appl. Phys. Lett.   DOI
9 /
[ P. W. Kruse;R.K. Willardson(ed.);A.C. Beer(ed.) ] / Semiconductors and Semimetals   DOI
10 Growth of <TEX>$Cd_{l-x}Zn_xTe$</TEX> by molecular beam epitaxy /
[ R.D. Feldman;R.F.Austin;P.H. Dayem;E.H. Westerwick ] / Appl. Phys. Lett.   DOI
11 Growth Kinetics and Properties of Heteroepitaxial (Cd, Zn)Te Films Prepared by Metalorganic Molecular Beam Epitaxy /
[ D.Rajavel;J.J. Zinck ] / J. Electron Mater.   DOI   ScienceOn
12 Analysis of the Temperature Distribution at Micromachining Processes for Microaccelerometer Based on Tunneling Current Effect /
[ OK SAM. KiM ] / Journal of the Korean Society of Machine Tool Engineers   과학기술학회마을
13 Bound excitons and resonant Raman scattering in <TEX>$Cd_xZn_{l-x}Te$</TEX> (0.9 < = x <= 1) /
[ E.Cohen;R. A. street;A. Muraevich ] / Phys.Rev.B   DOI
14 Photoluminescence studies in ZnxCd1-xTe single crystals /
[ J.GonZalez-Hernadez;E.Lopez-cruz;D.D.Allred;W. Allred ] / J. Vac.Sci.Technol
15 Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD /
[ P.W. Sze;N.F. Wang;M.P. Houng;Y.H. Wang;Y.T. Cherng;H.Wang ] / J. Cryst. Growth   DOI   ScienceOn
16 preparation of high purity cadmun by vacuum distillation and Zone-Melting Method /
[ Y. Ishikawa;B. Yang;K. Mimura;T. Tomizono;M. Isshiki ] / J. Mining&Mater. Process. Inst.Jpn   DOI